{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,23]],"date-time":"2025-12-23T18:56:48Z","timestamp":1766516208686,"version":"3.37.3"},"reference-count":39,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,9,13]],"date-time":"2021-09-13T00:00:00Z","timestamp":1631491200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,9,13]],"date-time":"2021-09-13T00:00:00Z","timestamp":1631491200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,9,13]],"date-time":"2021-09-13T00:00:00Z","timestamp":1631491200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000185","name":"SRC\/DARPA","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000185","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,9,13]]},"DOI":"10.1109\/essderc53440.2021.9631765","type":"proceedings-article","created":{"date-parts":[[2021,12,13]],"date-time":"2021-12-13T21:10:04Z","timestamp":1639429804000},"page":"21-28","source":"Crossref","is-referenced-by-count":9,"title":["Compute-in-Memory: From Device Innovation to 3D System Integration"],"prefix":"10.1109","author":[{"given":"Shimeng","family":"Yu","sequence":"first","affiliation":[]},{"given":"Wonbo","family":"Shim","sequence":"additional","affiliation":[]},{"given":"Jae","family":"Hur","sequence":"additional","affiliation":[]},{"given":"Yuan-chun","family":"Luo","sequence":"additional","affiliation":[]},{"given":"Gihun","family":"Choe","sequence":"additional","affiliation":[]},{"given":"Wantong","family":"Li","sequence":"additional","affiliation":[]},{"given":"Anni","family":"Lu","sequence":"additional","affiliation":[]},{"given":"Xiaochen","family":"Peng","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.3048101"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/JXCDC.2021.3057856"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/ECTC32862.2020.00231"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2020.3010795"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1016\/j.neunet.2019.12.027"},{"key":"ref30","article-title":"Heterogeneous system partitioning and the 3D interconnect technology landscape","author":"beyne","year":"0","journal-title":"IEEE Symposium on VLSI Technology"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.2969383"},{"key":"ref36","doi-asserted-by":"crossref","first-page":"2.5.1","DOI":"10.1109\/IEDM.2018.8614710","article-title":"Vertical ferroelectric HfO2 FET based on 3-D NAND architecture: towards dense low-power memory","author":"florent","year":"2018","journal-title":"IEEE International Electron Devices Meeting (IEDM)"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2882194"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9372091"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993491"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-00492-7"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268425"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128323"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3068086"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2930749"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/5.0018937"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IMW51353.2021.9439603"},{"key":"ref18","article-title":"A 3.6 Mb 10.1 Mb\/mm2 embedded non-volatile ReRAM macro in 22nm FinFET technology with adaptive forming\/set\/reset schemes yielding down to 0.5 V with sensing time of 5ns at 0.7 V","author":"jain","year":"0","journal-title":"IEEE International Solid-State Circuits Conference (ISSCC)"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3072610"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2016.2524691"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-018-0180-5"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/AICAS51828.2021.9458501"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-019-0270-x"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614527"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/IITC.2013.6615595"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993652"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.2969695"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614496"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"61","DOI":"10.1038\/nature14441","article-title":"Training and operation of an integrated neuromorphic network based on metal-oxide memristors","volume":"521","author":"prezioso","year":"2015","journal-title":"Nature"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9062985"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2921737"},{"key":"ref20","article-title":"Parallelizing SRAM arrays with customized bit-cell for binary neural networks","author":"liu","year":"2018","journal-title":"ACM\/IEEE Design Automation Conference (DAC)"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9371974"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724605"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1063\/1.5052012"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1063\/1.4995619"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/CICC51472.2021.9431558"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/aba5b7"}],"event":{"name":"ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)","start":{"date-parts":[[2021,9,13]]},"location":"Grenoble, France","end":{"date-parts":[[2021,9,22]]}},"container-title":["ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9631379\/9631380\/09631765.pdf?arnumber=9631765","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,11,14]],"date-time":"2023-11-14T01:43:55Z","timestamp":1699926235000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9631765\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,9,13]]},"references-count":39,"URL":"https:\/\/doi.org\/10.1109\/essderc53440.2021.9631765","relation":{},"subject":[],"published":{"date-parts":[[2021,9,13]]}}}