{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T16:52:35Z","timestamp":1730220755073,"version":"3.28.0"},"reference-count":21,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,9,19]],"date-time":"2022-09-19T00:00:00Z","timestamp":1663545600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,9,19]],"date-time":"2022-09-19T00:00:00Z","timestamp":1663545600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,9,19]]},"DOI":"10.1109\/essderc55479.2022.9947125","type":"proceedings-article","created":{"date-parts":[[2022,11,18]],"date-time":"2022-11-18T15:49:46Z","timestamp":1668786586000},"page":"368-371","source":"Crossref","is-referenced-by-count":4,"title":["Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide"],"prefix":"10.1109","author":[{"given":"Sara","family":"Vecchi","sequence":"first","affiliation":[{"name":"Università degli Studi di Modena e Reggio Emilia,Dipartimento di Ingegneria “Enzo Ferrari”,Modena,MO,Italy,41125"}]},{"given":"Paolo","family":"Pavan","sequence":"additional","affiliation":[{"name":"Università degli Studi di Modena e Reggio Emilia,Dipartimento di Ingegneria “Enzo Ferrari”,Modena,MO,Italy,41125"}]},{"given":"Francesco Maria","family":"Puglisi","sequence":"additional","affiliation":[{"name":"Università degli Studi di Modena e Reggio Emilia,Dipartimento di Ingegneria “Enzo Ferrari”,Modena,MO,Italy,41125"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref10","DOI":"10.1063\/1.3671565"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1109\/LED.2013.2251602"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/TED.2003.813236"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1155\/2014\/578168"},{"year":"2021","journal-title":"International Roadmap for Devices and Systems (IRDS) IRDS","key":"ref14"},{"year":"0","journal-title":"https \/\/www appliedmaterials com\/products\/applied-mdlx-ginestra-simulation-software","key":"ref15"},{"doi-asserted-by":"publisher","key":"ref16","DOI":"10.1063\/1.2807282"},{"doi-asserted-by":"publisher","key":"ref17","DOI":"10.1103\/PhysRevLett.89.225901"},{"doi-asserted-by":"publisher","key":"ref18","DOI":"10.1109\/IRPS48227.2022.9764472"},{"key":"ref19","article-title":"On the frequency dependence of oxide trap coupling in nanoscale MOSFETs: Understanding based on complete 4-state trap model","author":"hao","year":"0","journal-title":"2016 13th IEEE Int Conf Solid-State Integr Circuit Technol ICSICT 2016 - Proc"},{"key":"ref4","first-page":"5b51","article-title":"A microscopic physical description of RTN current fluctuations in HfOx RRAM","volume":"2015 may","author":"puglisi","year":"0","journal-title":"IEEE Int Reliab Phys Symp Proc"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1016\/j.sse.2016.07.019"},{"key":"ref6","article-title":"Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices","volume":"472","author":"wimmer","year":"0","journal-title":"Proc R Soc A Math Phys Eng Sci"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/TED.2015.2418114"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1007\/978-3-030-37500-3_12"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1109\/TED.2011.2167513"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1109\/TED.2015.2439812"},{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1016\/j.microrel.2011.09.002"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1109\/TED.2011.2158825"},{"doi-asserted-by":"publisher","key":"ref20","DOI":"10.1038\/s41598-017-06467-7"},{"key":"ref21","article-title":"Random Telegraph Noise: Measurement, DataAnalysis, and Interpretation","author":"puglisi","year":"0","journal-title":"2017 IEEE 24th International Symp on the Physical and Failure Anaysis of Integr Circuits"}],"event":{"name":"ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)","start":{"date-parts":[[2022,9,19]]},"location":"Milan, Italy","end":{"date-parts":[[2022,9,22]]}},"container-title":["ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9947060\/9947094\/09947125.pdf?arnumber=9947125","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,12,12]],"date-time":"2022-12-12T14:56:36Z","timestamp":1670856996000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9947125\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,9,19]]},"references-count":21,"URL":"https:\/\/doi.org\/10.1109\/essderc55479.2022.9947125","relation":{},"subject":[],"published":{"date-parts":[[2022,9,19]]}}}