{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,2]],"date-time":"2025-08-02T14:29:33Z","timestamp":1754144973428,"version":"3.41.2"},"reference-count":17,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,6,4]],"date-time":"2025-06-04T00:00:00Z","timestamp":1748995200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,6,4]],"date-time":"2025-06-04T00:00:00Z","timestamp":1748995200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,6,4]]},"DOI":"10.1109\/eurocon64445.2025.11073474","type":"proceedings-article","created":{"date-parts":[[2025,7,15]],"date-time":"2025-07-15T17:40:21Z","timestamp":1752601221000},"page":"1-5","source":"Crossref","is-referenced-by-count":0,"title":["Comparison of Thermal Properties of Power MOSFETs Made of Different Semiconductor Materials"],"prefix":"10.1109","author":[{"given":"Krzysztof","family":"G\u00f3recki","sequence":"first","affiliation":[{"name":"Gdynia Maritime University,Department of Power Electronics,Gdynia,Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Krzysztof","family":"Posobkiewicz","sequence":"additional","affiliation":[{"name":"Gdynia Maritime University,Department of Power Electronics,Gdynia,Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.5860\/choice.40-0320"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-030-43881-4"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3346369"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/MED.2024.3453051"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/MED.2024.3513012"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/SPEC62217.2024.10892938"},{"volume-title":"GaN transistors (GaN HEMTs), Infineon technologies, available online","key":"ref7"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/stherm.2004.1291304"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.24425\/ijet.2019.126295"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2692(96)00031-6"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2013.2290743"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.3390\/electronics10030340"},{"volume-title":"Class HiperFETTM Power MOSFET IXFT15N100Q3. Datasheet, IXYS, available online","key":"ref14"},{"volume-title":"C3M0280090D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode, Datasheet, Wolfspeed, available on-line","key":"ref15"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2014.11.001"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.3390\/electronics12194116"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.3390\/en14248353"}],"event":{"name":"IEEE EUROCON 2025 - 21st International Conference on Smart Technologies","start":{"date-parts":[[2025,6,4]]},"location":"Gdynia, Poland","end":{"date-parts":[[2025,6,6]]}},"container-title":["IEEE EUROCON 2025 - 21st International Conference on Smart Technologies"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/11073124\/11073193\/11073474.pdf?arnumber=11073474","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,16]],"date-time":"2025-07-16T06:07:01Z","timestamp":1752646021000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11073474\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,6,4]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/eurocon64445.2025.11073474","relation":{},"subject":[],"published":{"date-parts":[[2025,6,4]]}}}