{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T17:01:40Z","timestamp":1730221300445,"version":"3.28.0"},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,9]]},"DOI":"10.1109\/ewdts.2015.7493109","type":"proceedings-article","created":{"date-parts":[[2016,6,17]],"date-time":"2016-06-17T00:15:55Z","timestamp":1466122555000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["Measurement-based MOSFET model for helium temperatures"],"prefix":"10.1109","author":[{"given":"Vadim N.","family":"Biryukov","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alexandr M.","family":"Pilipenko","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","article-title":"A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature","volume":"32","author":"kan","year":"2011","journal-title":"Journal of Semiconductors"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/22.740069"},{"key":"ref10","first-page":"108","article-title":"Investigation of the Current-Voltage and Noise Characteristics of Field-Effect Transistors with An Insulated Gate at Low Temperatures","volume":"29","author":"biryukov","year":"1986","journal-title":"Radioelectronics and Communications Systems"},{"key":"ref6","first-page":"39","article-title":"Error estimation of parametric identification of a FET models","author":"biryukov","year":"2010","journal-title":"Proccedings of Universities Electronics"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2012.01.004"},{"key":"ref5","first-page":"69","article-title":"A four parameters C?-continuous compact model of FET","author":"biryukov","year":"2008","journal-title":"Proccedings of Universities Electronics"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1134\/S1063739709040064"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/4.661209"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1134\/S1063739710050070"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/EWDTS.2014.7027065"},{"journal-title":"Agilent Technologies","year":"2001","key":"ref1"}],"event":{"name":"2015 IEEE East-West Design & Test Symposium (EWDTS)","start":{"date-parts":[[2015,9,26]]},"location":"Batumi, Georgia","end":{"date-parts":[[2015,9,29]]}},"container-title":["2015 IEEE East-West Design & Test Symposium (EWDTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7488713\/7493093\/07493109.pdf?arnumber=7493109","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,17]],"date-time":"2017-03-17T16:05:02Z","timestamp":1489766702000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7493109\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/ewdts.2015.7493109","relation":{},"subject":[],"published":{"date-parts":[[2015,9]]}}}