{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T17:03:51Z","timestamp":1730221431846,"version":"3.28.0"},"reference-count":19,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,9]]},"DOI":"10.1109\/ewdts.2018.8524640","type":"proceedings-article","created":{"date-parts":[[2018,11,8]],"date-time":"2018-11-08T23:21:03Z","timestamp":1541719263000},"page":"1-5","source":"Crossref","is-referenced-by-count":12,"title":["Cryogenic Operational Amplifier on Complementary JFETs"],"prefix":"10.1109","author":[{"given":"Oleg V.","family":"Dvornikov","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nikolay N.","family":"Prokopenko","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Anna V.","family":"Bugakova","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Vladimir A.","family":"Tchekhovski","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Igor V.","family":"Maliy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"journal-title":"On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform","year":"2017","author":"wachter","key":"ref10"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/MCD.2002.994861"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/NSSMIC.2008.4774881"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/23.556905"},{"key":"ref14","first-page":"55001-1","article-title":"Annealing behavior of radiation damage in JFET-input operational amplifiers","volume":"30","author":"yuzhan","year":"2009","journal-title":"Semiconductors"},{"journal-title":"InterFET Corporation","year":"0","key":"ref15"},{"journal-title":"Differential amplifier on complementary field effect transistors with controlled limit voltage transfer characteristic","year":"2018","author":"bugakova","key":"ref16"},{"journal-title":"Buffer amplifier on complementary field effect transistor with controlled p-n transition for operation at low temperatures","year":"2018","author":"prokopenko","key":"ref17"},{"journal-title":"Integr","year":"0","key":"ref18"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2016.7598298"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/CCECE.2003.1226385"},{"key":"ref3","first-page":"1","article-title":"A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures","author":"krithivasan","year":"2006","journal-title":"2006 Bipolar\/BiCMOS Circuits and Technology Meeting"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/CCECE.2003.1226401"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1049\/iet-map.2013.0523"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/AERO.2008.4526490"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/SIBCON.2017.7998507"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1002\/rds.20039"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/AERO.2001.931205"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/RADECS.2016.8093194"}],"event":{"name":"2018 IEEE East-West Design & Test Symposium (EWDTS)","start":{"date-parts":[[2018,9,14]]},"location":"Kazan","end":{"date-parts":[[2018,9,17]]}},"container-title":["2018 IEEE East-West Design & Test Symposium (EWDTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8502702\/8524135\/08524640.pdf?arnumber=8524640","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,26]],"date-time":"2022-01-26T21:39:42Z","timestamp":1643233182000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8524640\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,9]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/ewdts.2018.8524640","relation":{},"subject":[],"published":{"date-parts":[[2018,9]]}}}