{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T18:15:50Z","timestamp":1730225750642,"version":"3.28.0"},"reference-count":16,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,5]]},"DOI":"10.1109\/i2mtc.2017.7969774","type":"proceedings-article","created":{"date-parts":[[2017,7,10]],"date-time":"2017-07-10T17:56:05Z","timestamp":1499709365000},"page":"1-5","source":"Crossref","is-referenced-by-count":0,"title":["Integrated method for impedance and low frequency noise measurements"],"prefix":"10.1109","author":[{"given":"G.","family":"Giusi","sequence":"first","affiliation":[]},{"given":"G.","family":"Scandurra","sequence":"additional","affiliation":[]},{"given":"C.","family":"Ciofi","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","article-title":"Noise model of Gate leakage current in ultrathin oxide MOSFETs","volume":"50","author":"lee","year":"2003","journal-title":"IEEE Trans Electron Devices"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1016\/j.sse.2005.10.035"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/ULIS.2008.4527159"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/LED.2015.2400422"},{"doi-asserted-by":"publisher","key":"ref14","DOI":"10.1109\/TAU.1967.1161901"},{"doi-asserted-by":"publisher","key":"ref15","DOI":"10.1142\/S0219477513500077"},{"doi-asserted-by":"publisher","key":"ref16","DOI":"10.1002\/cta.517"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1016\/S0038-1101(98)00322-0"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1016\/j.sse.2015.11.007"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1109\/ICMTS.2001.928650"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/19.310184"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1063\/1.4945263"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1109\/I2MTC.2015.7151606"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1007\/s10854-006-0001-8"},{"year":"0","author":"schroder","journal-title":"Semiconductor Material and Device Characterization 3rd","key":"ref1"},{"key":"ref9","article-title":"Simultaneous low-frequency noise characterization of gate and drain currents in AIGaN\/GaN high electron mobility transistors","volume":"106","author":"hemant","year":"2009","journal-title":"Journal of Applied Physics"}],"event":{"name":"2017 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)","start":{"date-parts":[[2017,5,22]]},"location":"Torino, Italy","end":{"date-parts":[[2017,5,25]]}},"container-title":["2017 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7959776\/7969646\/07969774.pdf?arnumber=7969774","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,8,16]],"date-time":"2017-08-16T11:34:32Z","timestamp":1502883272000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7969774\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,5]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/i2mtc.2017.7969774","relation":{},"subject":[],"published":{"date-parts":[[2017,5]]}}}