{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,29]],"date-time":"2025-05-29T22:01:35Z","timestamp":1748556095039},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2007,11]]},"DOI":"10.1109\/iccad.2007.4397355","type":"proceedings-article","created":{"date-parts":[[2008,1,9]],"date-time":"2008-01-09T14:22:47Z","timestamp":1199888567000},"page":"747-751","source":"Crossref","is-referenced-by-count":7,"title":["The effect of process variation on device temperature in finFET circuits"],"prefix":"10.1109","author":[{"family":"Jung Hwan Choi","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Jayathi Murthy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Kaushik Roy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2006.873892"},{"journal-title":"Taurus Device Simulator","year":"0","key":"ref11"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/16.777154"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2003.159781"},{"key":"ref14","first-page":"583","article-title":"Leakage power dependent temperature estimation to predict thermal runaway in FinFET circuits","author":"choi","year":"2006","journal-title":"Proc of ICCAD 2006"},{"journal-title":"Fluent CFD software","year":"0","key":"ref15"},{"key":"ref4","first-page":"883","article-title":"Thermal analysis of ultra-thin body device scaling","author":"pop","year":"2003","journal-title":"IEDM 2003"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/MCD.2004.1263404"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1145\/1065579.1065716"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.818594"},{"key":"ref8","first-page":"403","author":"sze","year":"1981","journal-title":"Physics of Semiconductor Devices"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1145\/871506.871530"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/DFTVS.2003.1250126"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1093\/ietfec\/e88-a.12.3382"},{"journal-title":"Fundamentals of Modern VLSI Devices","year":"1998","author":"taur","key":"ref9"}],"event":{"name":"2007 IEEE\/ACM International Conference on Computer-Aided Design","start":{"date-parts":[[2007,11,4]]},"location":"San Jose, CA, USA","end":{"date-parts":[[2007,11,8]]}},"container-title":["2007 IEEE\/ACM International Conference on Computer-Aided Design"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4397222\/4397223\/04397355.pdf?arnumber=4397355","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,16]],"date-time":"2017-03-16T15:40:02Z","timestamp":1489678802000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/4397355\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2007,11]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/iccad.2007.4397355","relation":{},"ISSN":["1092-3152"],"issn-type":[{"type":"print","value":"1092-3152"}],"subject":[],"published":{"date-parts":[[2007,11]]}}}