{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,3]],"date-time":"2026-04-03T00:35:09Z","timestamp":1775176509862,"version":"3.50.1"},"reference-count":34,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2008,11]]},"DOI":"10.1109\/iccad.2008.4681606","type":"proceedings-article","created":{"date-parts":[[2008,11,25]],"date-time":"2008-11-25T21:24:14Z","timestamp":1227648254000},"page":"406-411","source":"Crossref","is-referenced-by-count":16,"title":["Characterization and modeling of graphene field-effect devices"],"prefix":"10.1109","author":[{"given":"K. L.","family":"Shepard","sequence":"first","affiliation":[]},{"given":"I.","family":"Meric","sequence":"additional","affiliation":[]},{"given":"P.","family":"Kim","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"19","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.914069"},{"key":"17","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2008.67"},{"key":"18","year":"0"},{"key":"33","doi-asserted-by":"publisher","DOI":"10.1109\/16.711349"},{"key":"15","doi-asserted-by":"crossref","first-page":"951","DOI":"10.1126\/science.1130681","article-title":"controlling the electronic structure of bilayer graphene","volume":"313","author":"ohta","year":"2006","journal-title":"Science"},{"key":"34","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796738"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2082"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1016\/j.physe.2007.06.020"},{"key":"14","doi-asserted-by":"crossref","first-page":"1229","DOI":"10.1126\/science.1150878","article-title":"chemically derived, ultrasmooth graphene nanoribbon semiconductors","volume":"319","author":"li","year":"2008","journal-title":"Science"},{"key":"11","doi-asserted-by":"crossref","first-page":"677","DOI":"10.1103\/RevModPhys.79.677","article-title":"electronic and transport properties of nanotubes","volume":"79","author":"charlier","year":"2007","journal-title":"Reviews of Modern Physics"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.98.206805"},{"key":"21","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.0704772104"},{"key":"20","doi-asserted-by":"crossref","DOI":"10.1038\/nnano.2008.268","article-title":"current saturation in zero-bandgap, top-gated graphene field-effect transistors","author":"meric","year":"2008","journal-title":"Nature Nanotechnology"},{"key":"22","doi-asserted-by":"publisher","DOI":"10.1038\/nphys781"},{"key":"23","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.95.236803"},{"key":"24","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.84.2941"},{"key":"25","doi-asserted-by":"crossref","first-page":"517","DOI":"10.1021\/nl035258c","article-title":"electron-phonon scattering in metallic single-walled carbon nanotubes","volume":"4","author":"park","year":"2004","journal-title":"Nano Lett"},{"key":"26","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(78)90264-2"},{"key":"27","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1975.18267"},{"key":"28","year":"0"},{"key":"29","doi-asserted-by":"publisher","DOI":"10.1063\/1.1405826"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1021\/nl048055c"},{"key":"2","doi-asserted-by":"crossref","first-page":"1319","DOI":"10.1021\/nl049222b","article-title":"self-aligned ballistic molecular transistors and electrically parallel nanotube arrays","volume":"4","author":"javey","year":"2004","journal-title":"Nano Lett"},{"key":"10","doi-asserted-by":"crossref","first-page":"666","DOI":"10.1126\/science.1102896","article-title":"electric field effect in atomically thin carbon films","volume":"306","author":"novoselov","year":"2004","journal-title":"Science"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat769"},{"key":"30","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2008.58"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1038\/nature04233"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2006.880451"},{"key":"32","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2006.346873"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2007.300"},{"key":"31","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.97.187401"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2007.77"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1967"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1038\/nature04235"}],"event":{"name":"2008 IEEE\/ACM International Conference on Computer-Aided Design (ICCAD)","location":"San Jose, CA, USA","start":{"date-parts":[[2008,11,10]]},"end":{"date-parts":[[2008,11,13]]}},"container-title":["2008 IEEE\/ACM International Conference on Computer-Aided Design"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4670335\/4681527\/04681606.pdf?arnumber=4681606","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,18]],"date-time":"2017-06-18T14:00:30Z","timestamp":1497794430000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/4681606\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,11]]},"references-count":34,"URL":"https:\/\/doi.org\/10.1109\/iccad.2008.4681606","relation":{},"subject":[],"published":{"date-parts":[[2008,11]]}}}