{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T08:46:39Z","timestamp":1725612399191},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2010,11]]},"DOI":"10.1109\/iccad.2010.5653720","type":"proceedings-article","created":{"date-parts":[[2010,12,10]],"date-time":"2010-12-10T22:29:13Z","timestamp":1292020153000},"page":"432-437","source":"Crossref","is-referenced-by-count":12,"title":["Variation tolerant sensing scheme of Spin-Transfer Torque Memory for yield improvement"],"prefix":"10.1109","author":[{"given":"Zhenyu","family":"Sun","sequence":"first","affiliation":[]},{"given":"Hai","family":"Li","sequence":"additional","affiliation":[]},{"given":"Yiran","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Xiaobin","family":"Wang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"year":"0","key":"15"},{"key":"13","first-page":"347","article-title":"Variability in sub-100nm SRAM designs","author":"raymond","year":"2004","journal-title":"International Conference on Computer Aided Design (ICCAD)"},{"key":"14","article-title":"Embedded MRAM: Technology and applications","author":"andre","year":"2008","journal-title":"Embedded Memory Design for Nano-Scale VLSI System Forum with IEEE International Solid-State Circuits Conference (ISSCC)"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.79.104408"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2008.4672056"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2004.1345370"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4418854"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1145\/237090.237140"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2008.4479820"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/ASSCC.2006.357911"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2007.373503"},{"key":"5","first-page":"473","article-title":"A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM","author":"hosomi","year":"2005","journal-title":"Int Electron Devices Meeting Tech Dig"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2004.1345371"},{"key":"9","article-title":"A. nondestructive self-reference scheme for spin-transfer torque random access memory (STT)-RAM","author":"chen","year":"2010","journal-title":"Design Automation and Test in Europe Conference and Exhibition"},{"key":"8","first-page":"731","article-title":"An overview of nonvolatile memory technology and the implication for tools and architectures","author":"li","year":"2009","journal-title":"Proc Design Automation Test Europe Conf Exhibition"}],"event":{"name":"2010 IEEE\/ACM International Conference on Computer-Aided Design (ICCAD)","start":{"date-parts":[[2010,11,7]]},"location":"San Jose, CA, USA","end":{"date-parts":[[2010,11,11]]}},"container-title":["2010 IEEE\/ACM International Conference on Computer-Aided Design (ICCAD)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5638200\/5648785\/05653720.pdf?arnumber=5653720","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T06:40:32Z","timestamp":1490078432000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5653720\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,11]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/iccad.2010.5653720","relation":{},"subject":[],"published":{"date-parts":[[2010,11]]}}}