{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,3]],"date-time":"2026-03-03T21:18:53Z","timestamp":1772572733736,"version":"3.50.1"},"reference-count":17,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2011,11]]},"DOI":"10.1109\/iccad.2011.6105370","type":"proceedings-article","created":{"date-parts":[[2011,12,22]],"date-time":"2011-12-22T13:06:43Z","timestamp":1324559203000},"page":"471-477","source":"Crossref","is-referenced-by-count":64,"title":["STT-RAM cell design optimization for persistent and non-persistent error rate reduction: A statistical design view"],"prefix":"10.1109","author":[{"given":"Yaojun","family":"Zhang","sequence":"first","affiliation":[]},{"given":"Xiaobin","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Yiran","family":"Chen","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"17","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2008.2002386"},{"key":"15","doi-asserted-by":"publisher","DOI":"10.1063\/1.2837800"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2009.2015376"},{"key":"13","first-page":"1243","article-title":"A lagrangian formulation of the gyromagnetic equation of the magnetization field","volume":"100","author":"gilbert","year":"1955","journal-title":"Phys Rev"},{"key":"14","year":"0"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/19\/16\/165209"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.54.9353"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2007.4339686"},{"key":"2","first-page":"251","article-title":"Dynamic Vt SRAM: A leakage tolerant cache memory for low voltage micro-processor","author":"kim","year":"2002","journal-title":"ISLPED"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1145\/1785481.1785567"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1145\/1391469.1391698"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1145\/1629911.1629936"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424242"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1145\/1391469.1391540"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/ISCA.2008.32"},{"key":"9","first-page":"459","article-title":"A novel nonvolatile memory with spin torque transfer magnetization switching spin-RAM","author":"hosomi","year":"2005","journal-title":"IEDM"},{"key":"8","first-page":"2212","article-title":"Design margin exploration of STT-MRAM","author":"chen","year":"2008","journal-title":"ISQED"}],"event":{"name":"2011 IEEE\/ACM International Conference on Computer-Aided Design (ICCAD)","location":"San Jose, CA, USA","start":{"date-parts":[[2011,11,7]]},"end":{"date-parts":[[2011,11,10]]}},"container-title":["2011 IEEE\/ACM International Conference on Computer-Aided Design (ICCAD)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6095474\/6105287\/06105370.pdf?arnumber=6105370","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T11:03:06Z","timestamp":1490094186000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6105370\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,11]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/iccad.2011.6105370","relation":{},"subject":[],"published":{"date-parts":[[2011,11]]}}}