{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T21:56:34Z","timestamp":1767650194096,"version":"3.28.0"},"reference-count":36,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2014,11]]},"DOI":"10.1109\/iccad.2014.7001394","type":"proceedings-article","created":{"date-parts":[[2015,1,13]],"date-time":"2015-01-13T20:11:15Z","timestamp":1421179875000},"page":"478-485","source":"Crossref","is-referenced-by-count":63,"title":["Towards interdependencies of aging mechanisms"],"prefix":"10.1109","author":[{"given":"Hussam","family":"Amrouch","sequence":"first","affiliation":[]},{"given":"Victor M.","family":"van Santen","sequence":"additional","affiliation":[]},{"given":"Thomas","family":"Ebi","sequence":"additional","affiliation":[]},{"given":"Volker","family":"Wenzel","sequence":"additional","affiliation":[]},{"given":"Jorg","family":"Henkel","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref33","first-page":"5d.4.1","author":"yang","year":"2012","journal-title":"Intrinsic correlation between PBTI and TDDB degradations in nMOS HK\/MG dielectrics Reliability Physics Symposium IEEE International"},{"journal-title":"RAMP A model for reliability aware microprocessor design IBM Research Division","year":"2003","author":"srinivasan","key":"ref32"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1145\/1555349.1555369"},{"key":"ref30","first-page":"247","article-title":"A new SPICE reliability simulation method for deep submicrometer CMOS VLSI circuits Device and Materials Reliability","volume":"6","author":"xiaojun li","year":"2006","journal-title":"IEEE Transactions on"},{"key":"ref36","first-page":"247","article-title":"A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers","author":"mistry","year":"2007","journal-title":"193nm Dry Patterning and 100% Pb-free Packaging Electron Devices Meeting IEEE International"},{"key":"ref35","first-page":"87","volume":"13","author":"tae-hyoung kim","year":"2013","journal-title":"Impact Analysis of NBTI\/PBTI on SRAM VMIN and Design Techniques for Improved SRAM V MIN Journal of Semiconductor Technology and Science"},{"key":"ref34","first-page":"792","author":"tous","year":"2010","journal-title":"A compact analytic model for the breakdown distribution of gate stack dielectrics Reliability Physics Symposium (IRPS) IEEE International"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796816"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2259493"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173321"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.910130"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241840"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2040125"},{"key":"ref16","doi-asserted-by":"crossref","first-page":"98","DOI":"10.1109\/TDMR.2008.915629","article-title":"Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation","author":"li","year":"2008","journal-title":"Device and Materials Reliability IEEE Transactions on"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1145\/1146909.1146960"},{"key":"ref18","first-page":"652","article-title":"Multi-corner, energy-delay optimized, NBTI-aware flip-flop design Quality Electronic Design","author":"abrishami","year":"2010","journal-title":"11th IEEE International Symposium on"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2009.2020406"},{"key":"ref28","first-page":"105","volume":"53","author":"kothawade","year":"2013","journal-title":"Analysis and mitigation of BTI aging in register file An application driven approach Microelectronics Reliability"},{"key":"ref4","first-page":"23","article-title":"BSIM compact MOSFET models for SPICE simulation","author":"singh chauhan","year":"2013","journal-title":"Proc Int Conf Mixed Design of Integrated Circuits and System"},{"key":"ref27","first-page":"3","article-title":"Mibench: A free, commercially representative embedded benchmark suite","author":"guthaus","year":"2001","journal-title":"Proceedings of the Workload Characterization IEEE International Workshop"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/S0168-9002(03)01368-8"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2012.10.011"},{"key":"ref29","first-page":"1","article-title":"ExtraTime: Modeling and analysis of wearout due to transistor aging at microarchitecture-level Dependable Systems and Networks","author":"oboril","year":"2012","journal-title":"42nd Annual IEEE\/IFIP International Conference"},{"key":"ref5","first-page":"1","article-title":"Reliability- and process-variation aware design of integrated circuits","author":"alam","year":"2011","journal-title":"Reliability Physics Symposium (IRPS) IEEE International"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2010.2084100"},{"key":"ref7","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevLett.106.206402","article-title":"First-Principles Investigation of Low Energy E' Center Precursors in Amorphous Silica","author":"anderson","year":"2011","journal-title":"Phys Rev Lett"},{"year":"0","key":"ref2"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.12.004"},{"year":"0","key":"ref1"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2012.04.005"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/DSN.2013.6575315"},{"key":"ref21","first-page":"1524","article-title":"Berkeley reliability tools-BERT","author":"tu","year":"2006","journal-title":"Trans Comp -Aided Des Integ Cir Sys"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2005.845880"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2009.2016205"},{"journal-title":"Temperature-Aware Computer Systems","article-title":"Temperature aware floorplanning","year":"2005","key":"ref26"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1145\/1229175.1229176"}],"event":{"name":"2014 IEEE\/ACM International Conference on Computer-Aided Design (ICCAD)","start":{"date-parts":[[2014,11,2]]},"location":"San Jose, CA, USA","end":{"date-parts":[[2014,11,6]]}},"container-title":["2014 IEEE\/ACM International Conference on Computer-Aided Design (ICCAD)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6991350\/7001313\/07001394.pdf?arnumber=7001394","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T03:34:24Z","timestamp":1498188864000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7001394\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014,11]]},"references-count":36,"URL":"https:\/\/doi.org\/10.1109\/iccad.2014.7001394","relation":{},"subject":[],"published":{"date-parts":[[2014,11]]}}}