{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,2]],"date-time":"2025-12-02T15:06:51Z","timestamp":1764688011073},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,7,6]],"date-time":"2022-07-06T00:00:00Z","timestamp":1657065600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,7,6]],"date-time":"2022-07-06T00:00:00Z","timestamp":1657065600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,7,6]]},"DOI":"10.1109\/icce-taiwan55306.2022.9869282","type":"proceedings-article","created":{"date-parts":[[2022,9,1]],"date-time":"2022-09-01T19:41:03Z","timestamp":1662061263000},"page":"75-76","source":"Crossref","is-referenced-by-count":2,"title":["Gate Voltages Impacting on Latch-up Measurements"],"prefix":"10.1109","author":[{"given":"Shao-Chang","family":"Huang","sequence":"first","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jian-Hsing","family":"Lee","sequence":"additional","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chun-Chih","family":"Chen","sequence":"additional","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ching-Ho","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Electrical and Control Engineering, National Yang Ming Chiao Tung University,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chih-Cherng","family":"Liao","sequence":"additional","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kai-Chieh","family":"Hsu","sequence":"additional","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gong-Kai","family":"Lin","sequence":"additional","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Li-Fan","family":"Chen","sequence":"additional","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chien-Wei","family":"Wang","sequence":"additional","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chih-Hsuan","family":"Lin","sequence":"additional","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yeh-Ning","family":"Jou","sequence":"additional","affiliation":[{"name":"Vanguard International Semiconductor Corporation,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ke-Horng","family":"Chen","sequence":"additional","affiliation":[{"name":"Institute of Electrical and Control Engineering, National Yang Ming Chiao Tung University,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353550"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2015.2466532"},{"key":"ref6","first-page":"cr.2.1","article-title":"The Internal Circuit Damage of a High-Voltage Product During the Negative-Current-Triggered (NCT) Latch-up Test","author":"lee","year":"2013","journal-title":"IEEE International Reliability Physics Symposium"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/66.85940"},{"journal-title":"IC Latch-up Test","year":"2016","key":"ref7"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2016.7574559"},{"key":"ref1","first-page":"el.3.1","article-title":"ESD Protection Design with Adjustable Snapback Behavior for 5-V Application in 100nm CMOS Process","author":"wang","year":"2013","journal-title":"IEEE International Reliability Physics Symposium"}],"event":{"name":"2022 IEEE International Conference on Consumer Electronics - Taiwan","start":{"date-parts":[[2022,7,6]]},"location":"Taipei, Taiwan","end":{"date-parts":[[2022,7,8]]}},"container-title":["2022 IEEE International Conference on Consumer Electronics - Taiwan"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9868970\/9868972\/09869282.pdf?arnumber=9869282","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,9,19]],"date-time":"2022-09-19T20:25:06Z","timestamp":1663619106000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9869282\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,7,6]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/icce-taiwan55306.2022.9869282","relation":{},"subject":[],"published":{"date-parts":[[2022,7,6]]}}}