{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,18]],"date-time":"2026-03-18T00:03:56Z","timestamp":1773792236319,"version":"3.50.1"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2007,12,1]],"date-time":"2007-12-01T00:00:00Z","timestamp":1196467200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2007,12,1]],"date-time":"2007-12-01T00:00:00Z","timestamp":1196467200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2007,12]]},"DOI":"10.1109\/icecs.2007.4511118","type":"proceedings-article","created":{"date-parts":[[2008,5,5]],"date-time":"2008-05-05T16:21:05Z","timestamp":1210004465000},"page":"825-828","source":"Crossref","is-referenced-by-count":4,"title":["CMOS Power Amplifier with ESD Protection Design Merged in Matching Network"],"prefix":"10.1109","author":[{"given":"Yu-Da","family":"Shiu","sequence":"first","affiliation":[{"name":"SoC Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan. Email: ydshiu@itri.org.tw"}]},{"given":"Bo-Shih","family":"Huang","sequence":"additional","affiliation":[{"name":"SoC Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan. Email: huangboshi@itri.org.tw"}]},{"given":"Ming-Dou","family":"Ker","sequence":"additional","affiliation":[{"name":"Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan. Email: mdker@ieee.org"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2005.854208"},{"key":"ref3","first-page":"195","article-title":"Co-design methodology to provide high ESD protection levels in the advanced RF circuits","author":"vassilev","year":"2003","journal-title":"Proc of EOS\/ESD Symp"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/16.737457"},{"key":"ref5","first-page":"9","article-title":"Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs","author":"hyvonen","year":"2005","journal-title":"Proc of EOS\/ESD Symp"},{"key":"ref7","year":"2000","journal-title":"Electrostatic discharge (ESD) sensitivity testing - human body model (HBM) International Standard JEDEC EIA \/ JESD22- A144-B"},{"key":"ref2","first-page":"379","article-title":"RF characterization of ESD protection structures","author":"chen","year":"2004","journal-title":"IEEE RFIC Symp Dig"},{"key":"ref1","first-page":"427","article-title":"ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness","author":"ker","year":"2002","journal-title":"IEEE RFIC Symp Dig"}],"event":{"name":"2007 14th IEEE International Conference on Electronics, Circuits and Systems","location":"Marrakech, Morocco","start":{"date-parts":[[2007,12,11]]},"end":{"date-parts":[[2007,12,14]]}},"container-title":["2007 14th IEEE International Conference on Electronics, Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4456901\/4510892\/04511118.pdf?arnumber=4511118","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,3,17]],"date-time":"2026-03-17T20:20:30Z","timestamp":1773778830000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/4511118\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2007,12]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/icecs.2007.4511118","relation":{},"subject":[],"published":{"date-parts":[[2007,12]]}}}