{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,8]],"date-time":"2026-05-08T16:16:19Z","timestamp":1778256979885,"version":"3.51.4"},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2010,12]]},"DOI":"10.1109\/icecs.2010.5724510","type":"proceedings-article","created":{"date-parts":[[2011,3,8]],"date-time":"2011-03-08T11:27:36Z","timestamp":1299583656000},"page":"289-292","source":"Crossref","is-referenced-by-count":3,"title":["Gate oxide trap characterization under DC and pulse stress"],"prefix":"10.1109","author":[{"given":"S.","family":"Park","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.","family":"Lee","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Y.","family":"Ryu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.","family":"Kang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B.","family":"So","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D.","family":"Baek","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"crossref","DOI":"10.1063\/1.335690","article-title":"Interface-trap generation modeling of Fowler-Nordheim tunnel injection into ultra-thin gate oxide","author":"horiguchi","year":"1985","journal-title":"J Appl Phys"},{"key":"ref3","article-title":"Application of The difference Subthreshold Swing Analysis to Study Generation Interface Trap in MOS Structure Due to Fowler-Nordheim Aging","volume":"15","author":"tan","year":"1994","journal-title":"IEEE Elec Dev Lett"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2018161"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2002.805008"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1984.21472"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/16.954469"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/16.30938"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.111757"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.2006773"},{"key":"ref1","article-title":"Semiconductor Material and Device Characterization","author":"schroder","year":"2006"}],"event":{"name":"2010 17th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2010)","location":"Athens, Greece","start":{"date-parts":[[2010,12,12]]},"end":{"date-parts":[[2010,12,15]]}},"container-title":["2010 17th IEEE International Conference on Electronics, Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5720492\/5724436\/05724510.pdf?arnumber=5724510","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,19]],"date-time":"2017-06-19T20:48:13Z","timestamp":1497905293000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5724510\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,12]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/icecs.2010.5724510","relation":{},"subject":[],"published":{"date-parts":[[2010,12]]}}}