{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,23]],"date-time":"2024-10-23T00:08:32Z","timestamp":1729642112585,"version":"3.28.0"},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2010,12]]},"DOI":"10.1109\/icecs.2010.5724513","type":"proceedings-article","created":{"date-parts":[[2011,3,8]],"date-time":"2011-03-08T06:27:36Z","timestamp":1299565656000},"page":"301-304","source":"Crossref","is-referenced-by-count":0,"title":["Characteristics of double-gate polycrystalline silicon thin-film transistors for AMOLED pixel design"],"prefix":"10.1109","author":[{"given":"I.","family":"Pappas","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D.","family":"Tassis","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Siskos","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"C. A.","family":"Dimitriadis","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/16.998576"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2007.10.029"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(00)00082-4"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2004.829373"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/55.887473"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"269","DOI":"10.1109\/55.924838","article-title":"High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure","volume":"22","author":"lin","year":"2001","journal-title":"IEEE Electron Devices Letters"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.2226979"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/16.535329"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.1778485"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"445","DOI":"10.1109\/55.863106","article-title":"Analytical description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs","volume":"21","author":"oh","year":"2000","journal-title":"IEEE Electron Device Letters"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.371409"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.371560"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.901075"}],"event":{"name":"2010 17th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2010)","start":{"date-parts":[[2010,12,12]]},"location":"Athens, Greece","end":{"date-parts":[[2010,12,15]]}},"container-title":["2010 17th IEEE International Conference on Electronics, Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5720492\/5724436\/05724513.pdf?arnumber=5724513","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,19]],"date-time":"2017-06-19T16:48:13Z","timestamp":1497890893000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5724513\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,12]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/icecs.2010.5724513","relation":{},"subject":[],"published":{"date-parts":[[2010,12]]}}}