{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T12:41:46Z","timestamp":1725626506224},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2013,12]]},"DOI":"10.1109\/icecs.2013.6815511","type":"proceedings-article","created":{"date-parts":[[2014,5,16]],"date-time":"2014-05-16T19:05:07Z","timestamp":1400267107000},"page":"703-706","source":"Crossref","is-referenced-by-count":7,"title":["High performance 4H-SiC emitter coupled logic circuits"],"prefix":"10.1109","author":[{"given":"Shakti","family":"Singh","sequence":"first","affiliation":[]},{"given":"Nourhan El","family":"Sayed","sequence":"additional","affiliation":[]},{"given":"Hazem","family":"Elgabra","sequence":"additional","affiliation":[]},{"given":"Tamador","family":"ElBoshra","sequence":"additional","affiliation":[]},{"given":"Maisam","family":"Wahbah","sequence":"additional","affiliation":[]},{"given":"Mariam Al","family":"Zaabi","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"15","first-page":"217","author":"schroder","year":"1998","journal-title":"Semiconductor Material and Device Characterization"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1109\/55.910617"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1109\/55.910614"},{"journal-title":"High-performance TTL bipolar integrated circuits in 4H-SiC","year":"2010","author":"singh","key":"11"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.813520"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1063\/1.323506"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/55.556092"},{"key":"1","article-title":"Progress towards high temperature, high power SiCdevices","author":"neudeck","year":"1994","journal-title":"Institute of Physics Conference Series Compound Semiconductors"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2272649"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.645-648.1143"},{"key":"6","first-page":"1123","article-title":"Performance and reliability of SiC MOSFETs for high-current power modules","author":"matocha","year":"2009","journal-title":"Proc 12th ICSCRM"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2010.2077295"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2010.2077295"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2182514"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2107576"}],"event":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","start":{"date-parts":[[2013,12,8]]},"location":"Abu Dhabi, United Arab Emirates","end":{"date-parts":[[2013,12,11]]}},"container-title":["2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6810206\/6815321\/06815511.pdf?arnumber=6815511","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,23]],"date-time":"2017-03-23T19:05:27Z","timestamp":1490295927000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6815511\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,12]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/icecs.2013.6815511","relation":{},"subject":[],"published":{"date-parts":[[2013,12]]}}}