{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T22:19:05Z","timestamp":1730240345517,"version":"3.28.0"},"reference-count":12,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,12]]},"DOI":"10.1109\/icecs.2015.7440247","type":"proceedings-article","created":{"date-parts":[[2016,3,30]],"date-time":"2016-03-30T00:53:22Z","timestamp":1459299202000},"page":"53-56","source":"Crossref","is-referenced-by-count":0,"title":["Novel high-speed dynamic differential ultra low voltage logic for supply-voltage below 300 mV"],"prefix":"10.1109","author":[{"given":"O.","family":"Mirmotahari","sequence":"first","affiliation":[]},{"given":"A.","family":"Dadashi","sequence":"additional","affiliation":[]},{"given":"M.","family":"Azadmehr","sequence":"additional","affiliation":[]},{"given":"Y.","family":"Berg","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","first-page":"4.2.1","article-title":"Ultra low power CMOS technology","author":"burr","year":"1991","journal-title":"NASA VLSI Design Symposium"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2011.2177004"},{"key":"ref10","first-page":"11","article-title":"Robust low-power cmos precharge logic","author":"mirmotahari","year":"2013","journal-title":"IEEE Faible Tension Faible Consommation (FTFC)"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/APCCAS.1998.743739"},{"key":"ref11","first-page":"7","article-title":"Robostness of the ultra low-voltage domino gates cmos","author":"mirmotahari","year":"2013","journal-title":"Sixth International Conference on Advances in Circuits Electronics and Micro-electronics (CENICS 2013)"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.1994.344717"},{"key":"ref12","first-page":"114","article-title":"High speed cmos design styles","author":"bernstein","year":"1998","journal-title":"Springer Science and Business Media"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/82.775389"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1145\/224081.224083"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/4.126534"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2006.379914"},{"key":"ref1","first-page":"847","article-title":"Nanometer mosfet variation in minimum energy subthreshold circuits","volume":"55","author":"verma","year":"1995","journal-title":"IEEE Transactions on Electron Devices"}],"event":{"name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","start":{"date-parts":[[2015,12,6]]},"location":"Cairo, Egypt","end":{"date-parts":[[2015,12,9]]}},"container-title":["2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7430153\/7440163\/07440247.pdf?arnumber=7440247","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T12:10:06Z","timestamp":1490098206000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7440247\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,12]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/icecs.2015.7440247","relation":{},"subject":[],"published":{"date-parts":[[2015,12]]}}}