{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,20]],"date-time":"2026-09-20T05:26:15Z","timestamp":1789881975812,"version":"4.0.1"},"reference-count":19,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,12]]},"DOI":"10.1109\/icecs.2016.7841119","type":"proceedings-article","created":{"date-parts":[[2017,2,7]],"date-time":"2017-02-07T20:56:21Z","timestamp":1486500981000},"page":"9-12","source":"Crossref","is-referenced-by-count":2,"title":["Geometric variability impact on 7nm Trigate combinational cells"],"prefix":"10.1109","author":[{"given":"Alexandra L.","family":"Zimpeck","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ygor","family":"Aguiar","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Cristina","family":"Meinhardt","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ricardo","family":"Reis","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.811412"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131494"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.813457"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2520954"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ICICDT.2015.7165884"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.07.023"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2272998"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2014.7050050"},{"key":"ref18","article-title":"Exploring sub-20nm FinFET design with predictive technology models","year":"2012"},{"key":"ref19","year":"0"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1007\/s10825-006-0009-6"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2013.06.022"},{"key":"ref6","article-title":"Comprehensive analysis of variability sources of FinFET characteristics","author":"matsukawa","year":"2009","journal-title":"Symposium on VLSI Technology"},{"key":"ref5","first-page":"67","article-title":"Sub 50-nm FinFET: PMOS","author":"huang","year":"1999","journal-title":"Electron Devices Meeting IEDM Technical Digest International"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.921991"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/10\/2\/309"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2008.07.042"},{"key":"ref1","first-page":"3204","article-title":"Analysis of layout density in FinFET standard cells and impact of fin technology. Int. Symposium on Computer and Systems (ISCAS)","author":"alioto","year":"2010"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2008.917838"}],"event":{"name":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","location":"Monte Carlo, Monaco","start":{"date-parts":[[2016,12,11]]},"end":{"date-parts":[[2016,12,14]]}},"container-title":["2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7829200\/7841114\/07841119.pdf?arnumber=7841119","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,1]],"date-time":"2017-03-01T22:44:01Z","timestamp":1488408241000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7841119\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,12]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/icecs.2016.7841119","relation":{},"subject":[],"published":{"date-parts":[[2016,12]]}}}