{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,21]],"date-time":"2025-08-21T18:40:10Z","timestamp":1755801610318,"version":"3.44.0"},"reference-count":8,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,11]]},"DOI":"10.1109\/icecs46596.2019.8965118","type":"proceedings-article","created":{"date-parts":[[2020,1,23]],"date-time":"2020-01-23T22:15:31Z","timestamp":1579817731000},"page":"334-337","source":"Crossref","is-referenced-by-count":3,"title":["Active Dual Level Gate Driver for Switching Losses Reduction in IGBTs"],"prefix":"10.1109","author":[{"given":"E.","family":"Mandelli","sequence":"first","affiliation":[{"name":"University of Milano Bicocca,Milan,Italy"}]},{"given":"A.","family":"Mariconti","sequence":"additional","affiliation":[{"name":"Infineon Technologies Italia,Pavia,Italy"}]},{"given":"S.","family":"Ruzza","sequence":"additional","affiliation":[{"name":"Infineon Technologies Italia,Pavia,Italy"}]},{"given":"A.","family":"Baschirotto","sequence":"additional","affiliation":[{"name":"University of Milano Bicocca,Milan,Italy"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"crossref","first-page":"657","DOI":"10.1109\/TIA.2003.810654","article-title":"Flexible dv\/dt and di\/dt control method for insulated gate power switches","volume":"39","author":"shihong","year":"2003","journal-title":"IEEE Trans Industry Applications"},{"key":"ref3","first-page":"3402","article-title":"Closed-loop IGBT gate drive featuring highly dynamic $di\/dt$ and $dv\/dt$ control","volume":"30","author":"lobsinger","year":"2015","journal-title":"IEEE Trans Power Electron"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2016.7854818"},{"key":"ref5","first-page":"105","article-title":"A CMOS gate driver with ultra-fast dv\/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors","author":"bau","year":"2018","journal-title":"PrIMe"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2017.2716370"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2278794"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IECON.2016.7793222"},{"key":"ref1","first-page":"1","article-title":"Superjunction","author":"napoli","year":"1999","journal-title":"Wiley Encyclopedia of Electrical and Electronics Engineering"}],"event":{"name":"2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)","start":{"date-parts":[[2019,11,27]]},"location":"Genoa, Italy","end":{"date-parts":[[2019,11,29]]}},"container-title":["2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8955687\/8964633\/08965118.pdf?arnumber=8965118","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,20]],"date-time":"2025-08-20T18:35:04Z","timestamp":1755714904000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8965118\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,11]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/icecs46596.2019.8965118","relation":{},"subject":[],"published":{"date-parts":[[2019,11]]}}}