{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T10:18:53Z","timestamp":1725704333043},"reference-count":27,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,6]]},"DOI":"10.1109\/icicdt.2016.7542052","type":"proceedings-article","created":{"date-parts":[[2016,8,15]],"date-time":"2016-08-15T18:53:38Z","timestamp":1471287218000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["Characterization of high pressure hydrogen annealing effect on polysilicon channel field effect transistors using isothermal deep level trap spectroscopy"],"prefix":"10.1109","author":[{"given":"Manh-Cuong","family":"Nguyen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"An Hoang-Thuy","family":"Nguyen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jae-Won","family":"Choi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Soo-Yeun","family":"Han","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jung-Yeon","family":"Kim","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rino","family":"Choi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Changhwan","family":"Choi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2010.5556234"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131506"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/VLSI-SoC.2015.7314401"},{"key":"ref13","article-title":"Characterization and passivation of band gap states in metal-oxide- semiconductor field effect transistors with polycrystalline silicon channel","author":"jang","year":"2011","journal-title":"18th IPFA IEEE"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2005.855422"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.46.L786"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2014.11.015"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.1663719"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.19.L335"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.20.L549"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2015.7062960"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JDT.2015.2419656"},{"journal-title":"Extraction of trap energy distributions and capture time constants in disordered semiconductor channel thin film transistors","year":"0","author":"nguyen","key":"ref27"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2414924"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409618"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2015.7223705"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2014.6783376"},{"key":"ref2","article-title":"Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications","author":"heremans","year":"2015","journal-title":"Adv Mater"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2012.05.012"},{"key":"ref9","first-page":"119","author":"prince","year":"2014","journal-title":"Vertical 3D Memory Technologies"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1007\/BF00618899"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(88)90071-8"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(83)90026-6"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1049\/el:19790248"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1063\/1.1794897"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.70.235213"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1063\/1.325728"}],"event":{"name":"2016 International Conference on IC Design and Technology (ICICDT)","start":{"date-parts":[[2016,6,27]]},"location":"Ho Chi Minh City","end":{"date-parts":[[2016,6,29]]}},"container-title":["2016 International Conference on IC Design and Technology (ICICDT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7527574\/7542033\/07542052.pdf?arnumber=7542052","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,1,9]],"date-time":"2018-01-09T18:05:34Z","timestamp":1515521134000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7542052\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,6]]},"references-count":27,"URL":"https:\/\/doi.org\/10.1109\/icicdt.2016.7542052","relation":{},"subject":[],"published":{"date-parts":[[2016,6]]}}}