{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T23:27:41Z","timestamp":1730244461314,"version":"3.28.0"},"reference-count":23,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,6]]},"DOI":"10.1109\/icicdt.2019.8790844","type":"proceedings-article","created":{"date-parts":[[2019,8,8]],"date-time":"2019-08-08T23:25:46Z","timestamp":1565306746000},"page":"1-5","source":"Crossref","is-referenced-by-count":2,"title":["Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices"],"prefix":"10.1109","author":[{"given":"Yutao","family":"Cai","sequence":"first","affiliation":[]},{"given":"Yang","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Miao","family":"Cui","sequence":"additional","affiliation":[]},{"given":"Wen","family":"Liu","sequence":"additional","affiliation":[]},{"given":"Huiqing","family":"Wen","sequence":"additional","affiliation":[]},{"given":"Cezhou","family":"Zhao","sequence":"additional","affiliation":[]},{"given":"Ivona Z.","family":"Mitrovic","sequence":"additional","affiliation":[]},{"given":"Stephen","family":"Taylor","sequence":"additional","affiliation":[]},{"given":"Paul R.","family":"Chalker","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2015.07.033"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2696946"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.862702"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/31\/5\/055019"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2792839"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1063\/1.1899255"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2869776"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2654358"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2279846"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2000607"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1166\/nnl.2012.1406"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2016680"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2286090"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2298194"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2874075"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/aa5fcb"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2288644"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/16.936500"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/aa6374"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2095823"},{"key":"ref22","doi-asserted-by":"crossref","first-page":"1001","DOI":"10.1109\/LED.2014.2345130","article-title":"GaN MIS-HEMTs with nitrogen passivation for power device applications","volume":"35","author":"liu","year":"2014","journal-title":"IEEE Electron Device Letters"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2014.11.023"},{"key":"ref23","doi-asserted-by":"crossref","first-page":"106502","DOI":"10.7567\/APEX.10.106502","article-title":"Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al\n\n2\n\nO\n\n3\n\n\/Si\n\n3\n\nN\n\n4\n\n bilayer as gate dielectrics","volume":"10","author":"wang","year":"2017","journal-title":"Applied Physics Express"}],"event":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","start":{"date-parts":[[2019,6,17]]},"location":"SUZHOU, China","end":{"date-parts":[[2019,6,19]]}},"container-title":["2019 International Conference on IC Design and Technology (ICICDT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8784132\/8790825\/08790844.pdf?arnumber=8790844","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,18]],"date-time":"2022-07-18T15:10:18Z","timestamp":1658157018000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8790844\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,6]]},"references-count":23,"URL":"https:\/\/doi.org\/10.1109\/icicdt.2019.8790844","relation":{},"subject":[],"published":{"date-parts":[[2019,6]]}}}