{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,1]],"date-time":"2025-11-01T16:17:53Z","timestamp":1762013873279,"version":"build-2065373602"},"reference-count":9,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,6]]},"DOI":"10.1109\/icicdt.2019.8790891","type":"proceedings-article","created":{"date-parts":[[2019,8,8]],"date-time":"2019-08-08T23:25:46Z","timestamp":1565306746000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["On-Chip Process Variation Sensor Based on Sub-Threshold Leakage Current with Weak Bias Voltages"],"prefix":"10.1109","author":[{"given":"Shengkai","family":"Lyu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zheng","family":"Shi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1145\/1077603.1077611"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4418975"},{"key":"ref6","article-title":"Fast WAT test structure for measuring Vt variance based on latch-based comparators[C]","author":"lee","year":"2017","journal-title":"VLSI Test Symposium"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.911351"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2015.2461598"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2010.5434077"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/16.711362"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2003.821549"},{"journal-title":"Matching properties of MOS Transistors","year":"1989","author":"pelgrom","key":"ref1"}],"event":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","start":{"date-parts":[[2019,6,17]]},"location":"SUZHOU, China","end":{"date-parts":[[2019,6,19]]}},"container-title":["2019 International Conference on IC Design and Technology (ICICDT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8784132\/8790825\/08790891.pdf?arnumber=8790891","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,18]],"date-time":"2022-07-18T15:10:18Z","timestamp":1658157018000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8790891\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,6]]},"references-count":9,"URL":"https:\/\/doi.org\/10.1109\/icicdt.2019.8790891","relation":{},"subject":[],"published":{"date-parts":[[2019,6]]}}}