{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,24]],"date-time":"2025-06-24T13:48:20Z","timestamp":1750772900496},"reference-count":10,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,6]]},"DOI":"10.1109\/icicdt.2019.8790896","type":"proceedings-article","created":{"date-parts":[[2019,8,8]],"date-time":"2019-08-08T19:25:46Z","timestamp":1565292346000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["Effects of Substrate Terminal on the Dynamic Resistance and the Midpoint Potential of High Voltage Cascode GaN HEMTs"],"prefix":"10.1109","author":[{"given":"JunFeng","family":"Wu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"YongSheng","family":"Zhu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"GuangMin","family":"Deng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"ShuFeng","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yi","family":"Pe","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","article-title":"Composite circuit for power semiconductor switching","author":"baliga","year":"1982","journal-title":"European Patent EP2"},{"key":"ref3","first-page":"2506","article-title":"GaN HFET Switching Characteristics at 350V\/20 A and Synchronous Boost Converter Performance at 1MHz","author":"hughes","year":"2012","journal-title":"IEEE Appl Power Electron Conf Exposition"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2000921"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2377747"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2011.5994508"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2398856"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2707529"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2657579"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2264941"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2002.1021567"}],"event":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","start":{"date-parts":[[2019,6,17]]},"location":"SUZHOU, China","end":{"date-parts":[[2019,6,19]]}},"container-title":["2019 International Conference on IC Design and Technology (ICICDT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8784132\/8790825\/08790896.pdf?arnumber=8790896","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,18]],"date-time":"2022-07-18T11:10:18Z","timestamp":1658142618000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8790896\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,6]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/icicdt.2019.8790896","relation":{},"subject":[],"published":{"date-parts":[[2019,6]]}}}