{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,21]],"date-time":"2026-02-21T19:41:35Z","timestamp":1771702895323,"version":"3.50.1"},"reference-count":8,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T00:00:00Z","timestamp":1559347200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,6]]},"DOI":"10.1109\/icicdt.2019.8790946","type":"proceedings-article","created":{"date-parts":[[2019,8,8]],"date-time":"2019-08-08T23:25:46Z","timestamp":1565306746000},"page":"1-3","source":"Crossref","is-referenced-by-count":3,"title":["Modelling on GaN Power HEMT with Condideration of Subthreshold Swing Using Artificial Intelligence Technology"],"prefix":"10.1109","author":[{"given":"Yuanzhe","family":"Yao","sequence":"first","affiliation":[]},{"given":"Zeheng","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Liang","family":"Li","sequence":"additional","affiliation":[]},{"given":"Di","family":"Yang","sequence":"additional","affiliation":[]},{"given":"Shengji","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Xinghuan","family":"Chen","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.spmi.2018.07.016"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.spmi.2018.06.045"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEEE-IWS.2018.8400855"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2016.2555948"},{"key":"ref8","doi-asserted-by":"crossref","first-page":"385","DOI":"10.1109\/LED.2016.2535133","article-title":"Gate Reliability Investigation in Normally-Off p-Type-GaN Cap\/AlGaN\/GaN HEMTs Under Forward Bias Stress","volume":"37","author":"hilt","year":"2016","journal-title":"IEEE Electron Device Letters"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2011.5890835"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2899756"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1016\/j.spmi.2018.11.003"}],"event":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","location":"SUZHOU, China","start":{"date-parts":[[2019,6,17]]},"end":{"date-parts":[[2019,6,19]]}},"container-title":["2019 International Conference on IC Design and Technology (ICICDT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8784132\/8790825\/08790946.pdf?arnumber=8790946","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,18]],"date-time":"2022-07-18T15:10:19Z","timestamp":1658157019000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8790946\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,6]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/icicdt.2019.8790946","relation":{},"subject":[],"published":{"date-parts":[[2019,6]]}}}