{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,14]],"date-time":"2026-01-14T00:18:45Z","timestamp":1768349925415,"version":"3.49.0"},"reference-count":16,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,9,15]],"date-time":"2021-09-15T00:00:00Z","timestamp":1631664000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,9,15]],"date-time":"2021-09-15T00:00:00Z","timestamp":1631664000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,9,15]],"date-time":"2021-09-15T00:00:00Z","timestamp":1631664000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,9,15]]},"DOI":"10.1109\/icicdt51558.2021.9626399","type":"proceedings-article","created":{"date-parts":[[2021,12,2]],"date-time":"2021-12-02T20:29:35Z","timestamp":1638476975000},"page":"1-4","source":"Crossref","is-referenced-by-count":5,"title":["Design and Optimization of N-type SiC Gate Turn-off Thyristor with High Turn-off Gain and High Breakdown Voltage"],"prefix":"10.1109","author":[{"given":"Hongming","family":"Ma","sequence":"first","affiliation":[]},{"given":"Yan","family":"Wang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2013.6695557"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/SSLChinaIFWS51786.2020.9308751"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA46397.2019.8998904"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/PPPS34859.2019.9009743"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/EDSSC.2017.8126432"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2918008"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/41.370381"},{"key":"ref4","year":"0","journal-title":"SENTAURUS TCAD Software V2019 12"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/EDSSC.2016.7785296"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2020.3022913"},{"key":"ref5","author":"lin","year":"2013","journal-title":"Design and fabrication of 4h silicon carbide gate turn-off thyristors"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2037379"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2009.4802730"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2021.3061580"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2019.8757643"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.3005940"}],"event":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","location":"Dresden, Germany","start":{"date-parts":[[2021,9,15]]},"end":{"date-parts":[[2021,9,17]]}},"container-title":["2021 International Conference on IC Design and Technology (ICICDT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9626390\/9626391\/09626399.pdf?arnumber=9626399","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,5,10]],"date-time":"2022-05-10T16:53:57Z","timestamp":1652201637000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9626399\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,9,15]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/icicdt51558.2021.9626399","relation":{},"subject":[],"published":{"date-parts":[[2021,9,15]]}}}