{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T01:13:18Z","timestamp":1740100398390,"version":"3.37.3"},"reference-count":8,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,9,15]],"date-time":"2021-09-15T00:00:00Z","timestamp":1631664000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,9,15]],"date-time":"2021-09-15T00:00:00Z","timestamp":1631664000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,9,15]],"date-time":"2021-09-15T00:00:00Z","timestamp":1631664000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100006180","name":"Technology Development","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100006180","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,9,15]]},"DOI":"10.1109\/icicdt51558.2021.9626507","type":"proceedings-article","created":{"date-parts":[[2021,12,2]],"date-time":"2021-12-02T20:29:35Z","timestamp":1638476975000},"page":"1-4","source":"Crossref","is-referenced-by-count":1,"title":["Resistive switching performance of memristor with solution-processed stacked MO\/2D-materials switching layers"],"prefix":"10.1109","author":[{"given":"Zongjie","family":"Shen","sequence":"first","affiliation":[]},{"given":"Chun","family":"Zhao","sequence":"additional","affiliation":[]},{"given":"Ivona Z","family":"Mitrovic","sequence":"additional","affiliation":[]},{"given":"Cezhou","family":"Zhao","sequence":"additional","affiliation":[]},{"given":"Yina","family":"Liu","sequence":"additional","affiliation":[]},{"given":"Li","family":"Yang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1021\/acsmaterialslett.9b00419"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.matlet.2020.127413"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.9b16979"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2021.106010"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202011083"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201900107"},{"key":"ref2","first-page":"2005443-1","article-title":"2D Material Based Synaptic Devices for Neuromorphic Computing","volume":"31","author":"cao","year":"2020","journal-title":"Advanced Functional Materials"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202006469"}],"event":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","start":{"date-parts":[[2021,9,15]]},"location":"Dresden, Germany","end":{"date-parts":[[2021,9,17]]}},"container-title":["2021 International Conference on IC Design and Technology (ICICDT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9626390\/9626391\/09626507.pdf?arnumber=9626507","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,5,10]],"date-time":"2022-05-10T16:53:57Z","timestamp":1652201637000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9626507\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,9,15]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/icicdt51558.2021.9626507","relation":{},"subject":[],"published":{"date-parts":[[2021,9,15]]}}}