{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,21]],"date-time":"2025-10-21T03:29:47Z","timestamp":1761017387078,"version":"3.37.3"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,9,21]],"date-time":"2022-09-21T00:00:00Z","timestamp":1663718400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,9,21]],"date-time":"2022-09-21T00:00:00Z","timestamp":1663718400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100004364","name":"BP","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100004364","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,9,21]]},"DOI":"10.1109\/icicdt56182.2022.9933105","type":"proceedings-article","created":{"date-parts":[[2022,11,4]],"date-time":"2022-11-04T02:07:33Z","timestamp":1667527653000},"page":"81-83","source":"Crossref","is-referenced-by-count":3,"title":["Smart Cut<sup>\u2122<\/sup> technology: from Substrate Enginnering to Advanced 3D Integration"],"prefix":"10.1109","author":[{"given":"Guillaume","family":"Besnard","sequence":"first","affiliation":[{"name":"Innovation Soitec,Bernin,France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bich-Yen","family":"Nguyen","sequence":"additional","affiliation":[{"name":"Innovation Soitec,Austin,TX,USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Christophe","family":"Maleville","sequence":"additional","affiliation":[{"name":"Innovation Soitec,Bernin,France"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnologyandCir46769.2022.9830400"},{"key":"ref3","first-page":"18","article-title":"A greener SiC wafer with Smart Cut&#x2122; technology","volume":"27","author":"bonnin","year":"2021","journal-title":"Compound Semiconductor"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993583"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnologyandCir46769.2022.9830372"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993626"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9372020"},{"key":"ref1","article-title":"RF-SOI Engineered Substrates at the Heart of Modern RF mmWave Front-ends, Part 1 & 2","author":"andia","year":"2020","journal-title":"EETimes"}],"event":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","start":{"date-parts":[[2022,9,21]]},"location":"Hanoi, Vietnam","end":{"date-parts":[[2022,9,23]]}},"container-title":["2022 International Conference on IC Design and Technology (ICICDT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9933043\/9933065\/09933105.pdf?arnumber=9933105","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,11,28]],"date-time":"2022-11-28T20:19:35Z","timestamp":1669666775000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9933105\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,9,21]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/icicdt56182.2022.9933105","relation":{},"subject":[],"published":{"date-parts":[[2022,9,21]]}}}