{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T00:32:16Z","timestamp":1730248336954,"version":"3.28.0"},"reference-count":25,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,3]]},"DOI":"10.1109\/icit.2015.7125514","type":"proceedings-article","created":{"date-parts":[[2015,6,18]],"date-time":"2015-06-18T20:05:48Z","timestamp":1434657948000},"page":"2818-2823","source":"Crossref","is-referenced-by-count":5,"title":["The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE"],"prefix":"10.1109","author":[{"given":"Abderrazak","family":"Lakrim","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Driss","family":"Tahri","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"journal-title":"Help Product version 16 6","year":"2012","author":"cadence","key":"ref10"},{"key":"ref11","first-page":"177","article-title":"A high accuracy power MOSFET SPICE behavioral macromodel including the device selfheating and safe operating area simulation","author":"maxim","year":"1999","journal-title":"40th APEC"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2692(01)00013-1"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2006.872382"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.870423"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ICIT.2003.1290824"},{"key":"ref16","article-title":"Using MOSFET Spice Models for Analyzing Application Performance","author":"divins","year":"2014","journal-title":"Application Note AN-1194 International Rectifer"},{"key":"ref17","article-title":"A Revised MOSFET Model With Dynamic Temperature Compensation","author":"laprade","year":"2003","journal-title":"Application Note 7533 Fairchild Semiconductor Corporation"},{"year":"0","key":"ref18"},{"article-title":"Semiconductor Device Modeling with SPICE","year":"1993","author":"massobrio","key":"ref19"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2010.5617813"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2007.900561"},{"article-title":"Electrical Integration of SiC Power Devices for High-Power-Density Applications","year":"2013","author":"chen","key":"ref6"},{"key":"ref5","first-page":"387","article-title":"Etude de la cellule de commutation d'une alimentation it decoupage dans le cadre de la compatibilite electromagnetique","volume":"17","author":"lakrim","year":"2014","journal-title":"Revue Des Energies Renouvelables"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ISIE.1997.648931"},{"article-title":"EMI from Switched Converters - Simulation Methods and Reduction Techniques","year":"2011","author":"karvonen","key":"ref7"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2000.856809"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-5917-1"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2006766"},{"journal-title":"Help Product version 16 6","year":"2012","author":"cadence","key":"ref20"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.5772\/252"},{"key":"ref21","article-title":"Thermal Equivalent Circuit Models","author":"schutze","year":"2008","journal-title":"Infineon Application Note AN 2008-03"},{"key":"ref24","article-title":"Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE","volume":"4","author":"lakrim","year":"2014","journal-title":"Journal of Energy Technologies and Policy"},{"journal-title":"C2M0025120D-Silicon Carbide Power MOSFET Z-FETTM MOSFET Datasheet Rev- CREE","year":"0","key":"ref23"},{"key":"ref25","article-title":"Spice Electro-thermal Behavioral Model for a Silicon Carbide Power MOSFET","volume":"6","author":"lakrim","year":"2014","journal-title":"IJETED"}],"event":{"name":"2015 IEEE International Conference on Industrial Technology (ICIT)","start":{"date-parts":[[2015,3,17]]},"location":"Seville","end":{"date-parts":[[2015,3,19]]}},"container-title":["2015 IEEE International Conference on Industrial Technology (ICIT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7108493\/7125066\/07125514.pdf?arnumber=7125514","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,23]],"date-time":"2017-03-23T23:41:56Z","timestamp":1490312516000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7125514\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,3]]},"references-count":25,"URL":"https:\/\/doi.org\/10.1109\/icit.2015.7125514","relation":{},"subject":[],"published":{"date-parts":[[2015,3]]}}}