{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,27]],"date-time":"2025-10-27T10:50:39Z","timestamp":1761562239695,"version":"3.28.0"},"reference-count":12,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,3]]},"DOI":"10.1109\/icit.2017.7913070","type":"proceedings-article","created":{"date-parts":[[2017,5,12]],"date-time":"2017-05-12T22:23:01Z","timestamp":1494627781000},"page":"125-129","source":"Crossref","is-referenced-by-count":12,"title":["Investigation of the effects of load parasitic inductance on SiC MOSFETs switching performance"],"prefix":"10.1109","author":[{"given":"Hussain","family":"Sayed","sequence":"first","affiliation":[]},{"given":"Ahmed","family":"Zurfi","sequence":"additional","affiliation":[]},{"given":"Jing","family":"Zhang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2016.2586463"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2016.2587358"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2015.7310523"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TTE.2015.2426503"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ISIE.2016.7744933"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/INTLEC.2016.7749111"},{"key":"ref12","first-page":"1","article-title":"Short-Circuit Protection Circuits for Silicon Carbide Power Transistors","volume":"46","author":"sadik","year":"2015","journal-title":"IEEE Trans Ind Electron"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2016.2585666"},{"key":"ref7","first-page":"10","article-title":"Analysis of Packaging Impedance on Performance of SiC MOSFETs","author":"lemmon","year":"2016","journal-title":"PCIM Europe"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.2172\/885849"},{"key":"ref9","first-page":"41","article-title":"Optimum gate driver design to reach SiC-MOSFET 's full potential - speeding up to 200 kV \/ us","author":"kreutzer","year":"2015","journal-title":"1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2013.6647124"}],"event":{"name":"2017 IEEE International Conference on Industrial Technology (ICIT)","start":{"date-parts":[[2017,3,22]]},"location":"Toronto, ON","end":{"date-parts":[[2017,3,25]]}},"container-title":["2017 IEEE International Conference on Industrial Technology (ICIT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7907563\/7912587\/07913070.pdf?arnumber=7913070","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,7,10]],"date-time":"2017-07-10T17:23:21Z","timestamp":1499707401000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7913070\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,3]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/icit.2017.7913070","relation":{},"subject":[],"published":{"date-parts":[[2017,3]]}}}