{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T22:04:45Z","timestamp":1725746685684},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,2]]},"DOI":"10.1109\/icit.2018.8352250","type":"proceedings-article","created":{"date-parts":[[2018,5,4]],"date-time":"2018-05-04T17:34:26Z","timestamp":1525455266000},"page":"623-628","source":"Crossref","is-referenced-by-count":2,"title":["An accurate electro-thermal model of SiC power mosfets for fast simulations"],"prefix":"10.1109","author":[{"given":"Davide","family":"Lena","sequence":"first","affiliation":[]},{"given":"Irene","family":"Buraioli","sequence":"additional","affiliation":[]},{"given":"Alberto","family":"Bocca","sequence":"additional","affiliation":[]},{"given":"Danilo","family":"Demarchi","sequence":"additional","affiliation":[]},{"given":"Alberto","family":"Macii","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/BMAS.2005.1518198"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2016.7855041"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/CIPE.2004.1428119"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2295774"},{"journal-title":"SCT30N120-Silicon carbide Power MOSFET 1200 V 45 A 90 m? (typ TJ= 150°C) in an HiP247™ package Datasheet","year":"0","key":"ref14"},{"journal-title":"SCT30N120-Silicon carbide Power MOSFET PSpice model","year":"0","key":"ref15"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2368274"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.apenergy.2016.05.059"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2016.05.001"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2488106"},{"key":"ref8","first-page":"352","article-title":"Modeling and simulation of SiC MOSFET fast switching behavior under circuit parasitics","author":"chen","year":"2010","journal-title":"The Proceedings of the 2010 Conference on Grand Challenges in Modeling and Simulation"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.926650"},{"key":"ref2","article-title":"Wide Band Gap Materials: Revolution in Automotive Power Electronics","author":"bartolomeo","year":"2016","journal-title":"International Electric Vehicle Technology & Automobile Power Electronics Japan Conference (EVTec & APE Japan 2016)"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2012.6330619"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2006.889890"}],"event":{"name":"2018 IEEE International Conference on Industrial Technology (ICIT)","start":{"date-parts":[[2018,2,20]]},"location":"Lyon","end":{"date-parts":[[2018,2,22]]}},"container-title":["2018 IEEE International Conference on Industrial Technology (ICIT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8342303\/8352140\/08352250.pdf?arnumber=8352250","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T19:00:53Z","timestamp":1527879653000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8352250\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,2]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/icit.2018.8352250","relation":{},"subject":[],"published":{"date-parts":[[2018,2]]}}}