{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,20]],"date-time":"2026-01-20T11:42:36Z","timestamp":1768909356563,"version":"3.49.0"},"reference-count":23,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,11]]},"DOI":"10.1109\/icsai48974.2019.9010088","type":"proceedings-article","created":{"date-parts":[[2020,2,28]],"date-time":"2020-02-28T09:58:47Z","timestamp":1582883927000},"page":"249-252","source":"Crossref","is-referenced-by-count":4,"title":["Investigations of Low Dynamic R<sub>on<\/sub> on GaN\/AlGaN\/GaN HEMT by Field Plate Using Physical Device Simulations"],"prefix":"10.1109","author":[{"given":"Atluri","family":"Hemanth","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Manoj Kumar","family":"Reddy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jhansi","family":"Lakshmi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bhajantri Hemanth","family":"Kumar","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lavanya","family":"Bandi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gene","family":"Sheu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu-Lin","family":"Song","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Po-An","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Luh-Maan","family":"Chang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1998.746246"},{"key":"ref11","author":"lu","year":"2013","journal-title":"Reliability study of GaN-based high electron mobility transistors"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/55.863096"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2288644"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2290471"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2017.2672685"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.126940"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.842710"},{"key":"ref18","article-title":"Donor-like surface traps on two-dimensional electron gas and current collapse of AlGaN\/GaN HEMTs","author":"chen-hui","year":"2013","journal-title":"The Scientific World Journal 2013"},{"key":"ref19","year":"2017","journal-title":"General Overview of GaN power devices"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.spmi.2017.05.042"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/aaaf9d"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2004.826977"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201600601"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/EuMIC.2014.6997843"},{"key":"ref7","author":"naiqian","year":"2002","journal-title":"High voltage GaN HEMTs with low on-resistance for switching applications"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/MPEL.2014.2382195"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2016.2582685"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.859568"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/55.974794"},{"key":"ref22","first-page":"415","article-title":"Growth of crack-free GaN on Si (1 1 1) with graded AlGaN buffer layers","author":"andreas","year":"2005","journal-title":"Journal of Crystal Growth 301&#x2013;302"},{"key":"ref21","doi-asserted-by":"crossref","first-page":"512","DOI":"10.1016\/j.apsusc.2018.04.001","article-title":"Influence of the AlN nucleation layer on the properties of AlGaN\/GaN heterostructure on Si (1 1 1) substrates","volume":"447","author":"lei","year":"2018","journal-title":"Applied Surface Science"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1016\/j.spmi.2017.05.042"}],"event":{"name":"2019 6th International Conference on Systems and Informatics (ICSAI)","location":"Shanghai, China","start":{"date-parts":[[2019,11,2]]},"end":{"date-parts":[[2019,11,4]]}},"container-title":["2019 6th International Conference on Systems and Informatics (ICSAI)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8974456\/9010069\/09010088.pdf?arnumber=9010088","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,17]],"date-time":"2022-07-17T21:53:35Z","timestamp":1658094815000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9010088\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,11]]},"references-count":23,"URL":"https:\/\/doi.org\/10.1109\/icsai48974.2019.9010088","relation":{},"subject":[],"published":{"date-parts":[[2019,11]]}}}