{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,22]],"date-time":"2026-01-22T03:12:29Z","timestamp":1769051549456,"version":"3.49.0"},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,11]]},"DOI":"10.1109\/icsai48974.2019.9010496","type":"proceedings-article","created":{"date-parts":[[2020,2,28]],"date-time":"2020-02-28T09:58:47Z","timestamp":1582883927000},"page":"253-256","source":"Crossref","is-referenced-by-count":8,"title":["Physics Based TCAD Simulation and Calibration of GaN\/AlGaN\/GaN HEMT Device"],"prefix":"10.1109","author":[{"given":"Manoj Kumar","family":"Reddy","sequence":"first","affiliation":[]},{"given":"Jhansi","family":"Lakshmi","sequence":"additional","affiliation":[]},{"given":"Atluri","family":"Hemanth","sequence":"additional","affiliation":[]},{"given":"Bhajantri Hemanth","family":"Kumar","sequence":"additional","affiliation":[]},{"given":"Lavanya","family":"Bandi","sequence":"additional","affiliation":[]},{"given":"Gene","family":"Sheu","sequence":"additional","affiliation":[]},{"given":"Yu-Lin","family":"Song","sequence":"additional","affiliation":[]},{"given":"Po-An","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Luh-Maan","family":"Chang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"crossref","first-page":"512","DOI":"10.1016\/j.apsusc.2018.04.001","article-title":"Influence of the AlN nucleation layer on the properties of AlGaN\/GaN heterostructure on Si (1 1 1) substrates","volume":"447","author":"lei","year":"2018","journal-title":"Applied Surface Science"},{"key":"ref11","doi-asserted-by":"crossref","first-page":"415","DOI":"10.1016\/j.jcrysgro.2004.12.003","article-title":"Growth of crack-free GaN on Si (1 1 1) with graded AlGaN buffer layers","volume":"276","author":"andreas","year":"2005","journal-title":"Journal of Crystal Growth"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.126940"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.842710"},{"key":"ref14","article-title":"Donor-like surface traps on two-dimensional electron gas and current collapse of AlGaN\/GaN HEMTs","author":"chen-hui","year":"2013","journal-title":"The Scientific World Journal 2013"},{"key":"ref15","year":"2017","journal-title":"General Overview of GaN power devices"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2428613"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2002.1021569"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201600601"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2007.911060"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2017.2672685"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"39","DOI":"10.1017\/S1759078710000097","article-title":"Reliability issues of gallium nitride high electron mobility transistors","volume":"2","author":"gaudenzio","year":"2010","journal-title":"International Journal of Microwave and Wireless Technologies"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2224313"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ICSENS.2005.1597934"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TEPM.2004.843109"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2290471"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.369664"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/41.915402"}],"event":{"name":"2019 6th International Conference on Systems and Informatics (ICSAI)","location":"Shanghai, China","start":{"date-parts":[[2019,11,2]]},"end":{"date-parts":[[2019,11,4]]}},"container-title":["2019 6th International Conference on Systems and Informatics (ICSAI)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8974456\/9010069\/09010496.pdf?arnumber=9010496","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,17]],"date-time":"2022-07-17T21:54:29Z","timestamp":1658094869000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9010496\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,11]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/icsai48974.2019.9010496","relation":{},"subject":[],"published":{"date-parts":[[2019,11]]}}}