{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,6]],"date-time":"2026-03-06T18:33:57Z","timestamp":1772822037256,"version":"3.50.1"},"reference-count":4,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,11,23]],"date-time":"2020-11-23T00:00:00Z","timestamp":1606089600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,11,23]],"date-time":"2020-11-23T00:00:00Z","timestamp":1606089600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,11,23]],"date-time":"2020-11-23T00:00:00Z","timestamp":1606089600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,11,23]]},"DOI":"10.1109\/icta50426.2020.9332056","type":"proceedings-article","created":{"date-parts":[[2021,2,2]],"date-time":"2021-02-02T21:33:39Z","timestamp":1612301619000},"page":"114-115","source":"Crossref","is-referenced-by-count":3,"title":["L-Band 10-kW AlGaN\/GaN HEMT with operating voltage of 100V"],"prefix":"10.1109","author":[{"given":"Shichang","family":"Zhong","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tangsheng","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaoxing","family":"Yin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shaohong","family":"Jing","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiao","family":"Han","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/PAWR.2018.8310062"},{"key":"ref3","first-page":"1","article-title":"A Highly Manufacturable 75-150VDC GaN-SiC RF Technology for Radars and Particle Accelerators","author":"formicone","year":"2018","journal-title":"IEEE Transactions on Semiconductor Manufacturing"},{"key":"ref2","first-page":"1138","article-title":"Single-Chip L-Bandl500W Internally Matched AlGaN\/GaN HEMT","author":"zhong","year":"2019","journal-title":"2019 Aisa-PacificMicrowave Conference"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/AERO.2016.7500550"}],"event":{"name":"2020 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","location":"Nanjing, China","start":{"date-parts":[[2020,11,23]]},"end":{"date-parts":[[2020,11,25]]}},"container-title":["2020 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9331933\/9331955\/09332056.pdf?arnumber=9332056","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,28]],"date-time":"2022-06-28T00:27:06Z","timestamp":1656376026000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9332056\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,11,23]]},"references-count":4,"URL":"https:\/\/doi.org\/10.1109\/icta50426.2020.9332056","relation":{},"subject":[],"published":{"date-parts":[[2020,11,23]]}}}