{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,23]],"date-time":"2024-10-23T05:46:06Z","timestamp":1729662366556,"version":"3.28.0"},"reference-count":18,"publisher":"IEEE Comput. Soc","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"DOI":"10.1109\/icvd.2004.1260940","type":"proceedings-article","created":{"date-parts":[[2004,6,21]],"date-time":"2004-06-21T17:52:40Z","timestamp":1087840360000},"page":"291-296","source":"Crossref","is-referenced-by-count":0,"title":["Screening of hot electron effect during plasma processing"],"prefix":"10.1109","author":[{"given":"P.","family":"Srinivasan","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B.","family":"Vootukuru","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D.","family":"Misra","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","first-page":"186","article-title":"Is NMOSFET Hot Carrier Lifetime Degraded By Charging Damage?","author":"cheung","year":"1997","journal-title":"1997 2nd Int Plasma Process-Induced Damage Conf"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/16.30938"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/16.817583"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.1363680"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1063\/1.332323"},{"key":"ref15","doi-asserted-by":"crossref","first-page":"1445","DOI":"10.1109\/TED.2003.813333","article-title":"MOSFET degradation kinetics and simulation","volume":"50","author":"oleg","year":"2003","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.61.8393"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.1992.363283"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2002.1015430"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"529","DOI":"10.1088\/0268-1242\/13\/5\/001","article-title":"Effect of source and drain junctions on plasma charging","volume":"13","author":"cheung","year":"1998","journal-title":"Semicond Sci Technol"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/55.701426"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/16.661234"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IRWS.1997.660273"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.1995.513689"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.1994.307859"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2002.1003759"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.813369"},{"key":"ref9","first-page":"164","article-title":"Comparison Of Hot-electron And Fowler-Nordheim Characterization Of Charging Events In A 0.5-\/spl mu\/m CMOS Technology","author":"hook","year":"1996","journal-title":"1996 1st Int Plasma Process-Induced Damage Conf"}],"event":{"name":". 17th International Conference on VLSI Design","acronym":"ICVD-04","location":"Mumbai, India"},"container-title":["17th International Conference on VLSI Design. Proceedings."],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/8911\/28180\/01260940.pdf?arnumber=1260940","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,16]],"date-time":"2017-06-16T04:12:11Z","timestamp":1497586331000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/1260940\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[null]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/icvd.2004.1260940","relation":{},"subject":[]}}