{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,8]],"date-time":"2024-09-08T04:50:24Z","timestamp":1725771024905},"reference-count":16,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,10]]},"DOI":"10.1109\/iecon.2017.8216719","type":"proceedings-article","created":{"date-parts":[[2017,12,21]],"date-time":"2017-12-21T17:02:40Z","timestamp":1513875760000},"page":"4194-4199","source":"Crossref","is-referenced-by-count":6,"title":["Unwanted turn-on of SiC JFET bi-directional switches under influence of parasitic parameters"],"prefix":"10.1109","author":[{"given":"Lina","family":"Wang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiangcai","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jie","family":"Deng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Junyi","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Olanrewaju Kabir","family":"Oladele","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","article-title":"CASCODE LIGHT-normally-on JFET stand alone performance in a normally-off Cascode circuit","author":"domes","year":"2010","journal-title":"at PCIM"},{"year":"0","journal-title":"Infienon 1200 V CoolSiC™ Power Transistor IJW120R070Tl","key":"ref11"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/TED.2014.2373373"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/TPEL.2015.2510425"},{"key":"ref14","first-page":"1","article-title":"The 1200V direct-driven SiC JFET power switch","author":"siemieniec","year":"2011","journal-title":"Proceedings of the 2011 14th European Conference on Power Electronics and Applications EPE"},{"doi-asserted-by":"publisher","key":"ref15","DOI":"10.1109\/TPEL.2013.2273275"},{"doi-asserted-by":"publisher","key":"ref16","DOI":"10.1109\/TPEL.2012.2226473"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1109\/TPEL.2015.2398856"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/TPEL.2016.2532799"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1109\/TPEL.2013.2267804"},{"key":"ref5","article-title":"High Frequency GaN Characterization and Design Considerations","author":"huang","year":"2016","journal-title":"Virginia Tech"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/TPEL.2012.2230536"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1109\/APEC.2013.6520465"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1109\/TPEL.2013.2276127"},{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1109\/TPEL.2013.2283144"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1016\/j.microrel.2011.12.006"}],"event":{"name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","start":{"date-parts":[[2017,10,29]]},"location":"Beijing","end":{"date-parts":[[2017,11,1]]}},"container-title":["IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8168197\/8216002\/08216719.pdf?arnumber=8216719","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,1,23]],"date-time":"2018-01-23T15:36:24Z","timestamp":1516721784000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8216719\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,10]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/iecon.2017.8216719","relation":{},"subject":[],"published":{"date-parts":[[2017,10]]}}}