{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,4,22]],"date-time":"2025-04-22T01:11:37Z","timestamp":1745284297166,"version":"3.28.0"},"reference-count":18,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,10]]},"DOI":"10.1109\/iecon.2017.8216832","type":"proceedings-article","created":{"date-parts":[[2017,12,21]],"date-time":"2017-12-21T22:02:40Z","timestamp":1513893760000},"page":"4823-4828","source":"Crossref","is-referenced-by-count":5,"title":["A non-segmented PSpice model of SiC MOSFETs"],"prefix":"10.1109","author":[{"given":"Hong","family":"Li","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xingran","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ruixiang","family":"Hao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kai","family":"Sun","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref10","DOI":"10.1109\/TED.2008.926650"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1109\/TPEL.2013.2273459"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/APEC.2012.6166050"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/LPT.2017.2685680"},{"key":"ref14","article-title":"Non-segmented Pspice Circuit Model of GaN HEMT with Simulation Convergence Consideration","author":"li","year":"0","journal-title":"IEEE Transactions on Industrial Electronics"},{"year":"2017","journal-title":"Wolfspeed C2M0045170D _datasheet","key":"ref15"},{"doi-asserted-by":"publisher","key":"ref16","DOI":"10.1109\/APMC.2006.4429422"},{"year":"2015","author":"qian","journal-title":"Study on high power GaN HEMT device modeling","key":"ref17"},{"key":"ref18","first-page":"44","article-title":"Construction of nonlinear capacitance PSpice model","volume":"3","author":"wu","year":"1999","journal-title":"Journal of Harbin Institute of Technology"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1109\/TPEL.2013.2289395"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/TPEL.2013.2273275"},{"year":"0","key":"ref6"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/TPEL.2015.2432012"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/TED.2008.926665"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1109\/TED.2014.2368274"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1109\/TIE.2010.2072896"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1063\/1.1499523"},{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1109\/TPEL.2013.2268900"}],"event":{"name":"IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society","start":{"date-parts":[[2017,10,29]]},"location":"Beijing","end":{"date-parts":[[2017,11,1]]}},"container-title":["IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8168197\/8216002\/08216832.pdf?arnumber=8216832","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,26]],"date-time":"2022-01-26T16:54:14Z","timestamp":1643216054000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8216832\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,10]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/iecon.2017.8216832","relation":{},"subject":[],"published":{"date-parts":[[2017,10]]}}}