{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,28]],"date-time":"2026-02-28T18:36:53Z","timestamp":1772303813916,"version":"3.50.1"},"reference-count":19,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,10]]},"DOI":"10.1109\/iecon.2018.8591802","type":"proceedings-article","created":{"date-parts":[[2019,1,18]],"date-time":"2019-01-18T22:30:15Z","timestamp":1547850615000},"page":"1471-1476","source":"Crossref","is-referenced-by-count":5,"title":["Research on Overcurrent Detection and Protection of High-Power SiC MOSFET Driver"],"prefix":"10.1109","author":[{"given":"Xianjin","family":"Huang","sequence":"first","affiliation":[]},{"given":"Chao","family":"Tian","sequence":"additional","affiliation":[]},{"given":"Xiaojie","family":"You","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2016.2586107"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2005.1453213"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2014.2304454"},{"key":"ref13","first-page":"64","article-title":"The effects of parasitic parameters on gate-source voltage of SiC MOSFET[J]","volume":"31","author":"ba","year":"2016","journal-title":"Transactions of China Electrotechnical Society"},{"key":"ref14","first-page":"200","article-title":"The effect of SiO2\/SiC interface on the electronic mobility of 4H - SiCn - MoSFET trans channel [J]","volume":"25","author":"xu","year":"2004","journal-title":"Semiconductors"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(03)00319-6"},{"key":"ref16","first-page":"1","article-title":"Short-circuit capability: benchmarking SiC and GaN devices with Si-based technologies[C]","author":"yu","year":"2015","journal-title":"PCIM Europe 2015 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management Proceedings of VDE"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2016.2628895"},{"key":"ref18","first-page":"1","article-title":"Investigation on the short circuit safe operation area of SiC MOSFET power modules[C]","author":"reigosa","year":"2017","journal-title":"Energy Conversion Congress and Exposition IEEE"},{"key":"ref19","first-page":"67","article-title":"Research on overcurrent protection of IGBT based on HCPL-316 J [J]","author":"wei","year":"2014","journal-title":"New technology of electrical and electrical energy"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2010.2072896"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2010.2048292"},{"key":"ref6","article-title":"Gate-Driver with full protection for SiC-MOSFET modules","author":"fink","year":"2016","journal-title":"PCIM Asia 2016 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management Proceedings of VDE"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2013.6647436"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2015.7310332"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2016.7467921"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/MIE.2012.2193291"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2013.2240636"},{"key":"ref9","first-page":"51","article-title":"Research on short-circuit protection methods for SiC MOSFET[J]","author":"wu","year":"2017","journal-title":"Power Electronics Technology"}],"event":{"name":"IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society","location":"Washington, DC","start":{"date-parts":[[2018,10,21]]},"end":{"date-parts":[[2018,10,23]]}},"container-title":["IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8560606\/8591058\/08591802.pdf?arnumber=8591802","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T05:51:22Z","timestamp":1598248282000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8591802\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,10]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/iecon.2018.8591802","relation":{},"subject":[],"published":{"date-parts":[[2018,10]]}}}