{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,2]],"date-time":"2025-08-02T19:01:59Z","timestamp":1754161319752,"version":"3.41.2"},"reference-count":11,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,10]]},"DOI":"10.1109\/iecon.2019.8926781","type":"proceedings-article","created":{"date-parts":[[2019,12,27]],"date-time":"2019-12-27T16:00:17Z","timestamp":1577462417000},"page":"5114-5119","source":"Crossref","is-referenced-by-count":12,"title":["Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation"],"prefix":"10.1109","author":[{"given":"Ajit","family":"Kanale","sequence":"first","affiliation":[{"name":"North Carolina State University,Department of Electrical and Computer Engineering,Raleigh,NC,USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B. Jayant","family":"Baliga","sequence":"additional","affiliation":[{"name":"North Carolina State University,Department of Electrical and Computer Engineering,Raleigh,NC,USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-93988-9"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2018.8569178"},{"journal-title":"IXYS product page","year":"0","key":"ref10"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2013.2297304"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.963.797"},{"key":"ref5","first-page":"866","article-title":"In-depth study of short-circuit robustness and protection of 1200V SiC MOSFETs","author":"zhang","year":"0","journal-title":"PCIM-Europe 2018"},{"key":"ref8","article-title":"Enhancing short-circuit capability of 1.2kV SiC Power MOSFETs using a gate-source-shorted Si depletion-mode MOSFET in series with the source","author":"kanale","year":"0","journal-title":"IEEE Pwr Elec and Drives Symp"},{"journal-title":"U S patent applied and pending","year":"0","author":"baliga","key":"ref7"},{"key":"ref2","first-page":"42","article-title":"Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT","author":"sui","year":"0","journal-title":"13th China Int Frm Wide Bandgap Semicond"},{"journal-title":"Wolfspeed product page","year":"0","key":"ref9"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7046960"}],"event":{"name":"IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society","start":{"date-parts":[[2019,10,14]]},"location":"Lisbon, Portugal","end":{"date-parts":[[2019,10,17]]}},"container-title":["IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8897531\/8926608\/08926781.pdf?arnumber=8926781","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,28]],"date-time":"2025-07-28T19:37:52Z","timestamp":1753731472000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8926781\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/iecon.2019.8926781","relation":{},"subject":[],"published":{"date-parts":[[2019,10]]}}}