{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,29]],"date-time":"2025-12-29T11:09:09Z","timestamp":1767006549278},"reference-count":26,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,10]]},"DOI":"10.1109\/iecon.2019.8927774","type":"proceedings-article","created":{"date-parts":[[2019,12,27]],"date-time":"2019-12-27T21:00:17Z","timestamp":1577480417000},"page":"5154-5159","source":"Crossref","is-referenced-by-count":11,"title":["Performance Evaluation of the Body-Diode of SiC Mosfets under Repetitive Surge Current Operation"],"prefix":"10.1109","author":[{"given":"Thiago Batista","family":"Soeiro","sequence":"first","affiliation":[]},{"given":"Elena","family":"Mengotti","sequence":"additional","affiliation":[]},{"given":"Enea","family":"Bianda","sequence":"additional","affiliation":[]},{"given":"Gabriel","family":"Ortiz","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2599818"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2014.2301814"},{"key":"ref12","article-title":"Three-Phase Five-Level Bidirectional Buck-+ Boost-Type PFC Converter for DC Distribution Systems","author":"soeiro","year":"0","journal-title":"Proc IEEE Int Conf Ind Technol (ICIT)"},{"key":"ref13","first-page":"644","article-title":"1.7 kV high-current SiC power module based on multilevel substrate concept and exploiting MOSFET body diode during operation","author":"kicin","year":"0","journal-title":"Proc PCIM Europe"},{"key":"ref14","article-title":"Three-phase unidirectional quasi-single-stage delta-switch rectifier + dc-dc buck converter","author":"soeiro","year":"0","journal-title":"Proc 39th Ann Conf of the IEEE Ind Electr Soc (IECON"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2006.1666123"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2008.4538944"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.897861"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/PEDG.2013.6785593"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2016.07.044"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IFWS.2016.7803751"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TENCON.2016.7848572"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2015.7310244"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IECON.2017.8216208"},{"key":"ref8","article-title":"Application of 1.7-kV 700-A SiC LinPak to Optimize LCL Grid-Tied Converters","author":"park","year":"0","journal-title":"Proc of the 10th International Conference on Power Electronics – ECCE Asia"},{"key":"ref7","first-page":"1","article-title":"High Humidity, High Temperature and High Voltage Reverse Bias - A Relevant Test for Industrial Applications","author":"jormanainen","year":"0","journal-title":"PCIM-Europe 2018"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.4922748"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2018.2817074"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.54.040103"},{"key":"ref20","first-page":"139","article-title":"Reliability and stability of SiC power MOSFET and next-generation SiC MOSFETs","author":"hull","year":"0","journal-title":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2018.8558388"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2017.8095883"},{"key":"ref24","first-page":"235","article-title":"Various structure of 1200V SiC MPS diode models and their simulated surge current behavior in comparision to measurement","author":"palanisamy","year":"0","journal-title":"Proceedings of the International Symposium on Power Semiconductor Devices and ICs (ISPSD)"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393679"},{"key":"ref26","article-title":"Semiconductor Power Devices-Physics, Characteristic","author":"lutz","year":"2011","journal-title":"Reliability"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2017.7931020"}],"event":{"name":"IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society","start":{"date-parts":[[2019,10,14]]},"location":"Lisbon, Portugal","end":{"date-parts":[[2019,10,17]]}},"container-title":["IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8897531\/8926608\/08927774.pdf?arnumber=8927774","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,23]],"date-time":"2020-08-23T23:58:21Z","timestamp":1598227101000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8927774\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10]]},"references-count":26,"URL":"https:\/\/doi.org\/10.1109\/iecon.2019.8927774","relation":{},"subject":[],"published":{"date-parts":[[2019,10]]}}}