{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,11]],"date-time":"2026-03-11T16:36:50Z","timestamp":1773247010527,"version":"3.50.1"},"reference-count":16,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,10,20]],"date-time":"2024-10-20T00:00:00Z","timestamp":1729382400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,10,20]],"date-time":"2024-10-20T00:00:00Z","timestamp":1729382400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,10,20]]},"DOI":"10.1109\/ieeeconf63530.2024.10830836","type":"proceedings-article","created":{"date-parts":[[2025,1,13]],"date-time":"2025-01-13T19:40:37Z","timestamp":1736797237000},"page":"1-5","source":"Crossref","is-referenced-by-count":2,"title":["Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors"],"prefix":"10.1109","author":[{"given":"Dominik","family":"Kleimaier","sequence":"first","affiliation":[{"name":"GlobalFoundries Fab1 LLC & Co. KG,Dresden,Germany"}]},{"given":"Stefan","family":"D\u00fcnkel","sequence":"additional","affiliation":[{"name":"GlobalFoundries Fab1 LLC & Co. KG,Dresden,Germany"}]},{"given":"Halid","family":"Mulaosmanovic","sequence":"additional","affiliation":[{"name":"GlobalFoundries Fab1 LLC & Co. KG,Dresden,Germany"}]},{"given":"Johannes","family":"M\u00fcller","sequence":"additional","affiliation":[{"name":"GlobalFoundries Fab1 LLC & Co. KG,Dresden,Germany"}]},{"given":"Sven","family":"Beyer","sequence":"additional","affiliation":[{"name":"GlobalFoundries Fab1 LLC & Co. KG,Dresden,Germany"}]},{"given":"Viktor","family":"Havel","sequence":"additional","affiliation":[{"name":"NaMLab gGmbH,Dresden,Germany"}]},{"given":"Thomas","family":"Mikolajick","sequence":"additional","affiliation":[{"name":"NaMLab gGmbH,Dresden,Germany"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/ac189f"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998165"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.5108562"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1145\/3218603.3218640"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2871119"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-023-42110-y"},{"key":"ref7","first-page":"11.5.1","article-title":"A 28 nm HKMG super low power embedded NVM technology based on ferroelectric FETs","author":"Trentzsch","year":"2016","journal-title":"in IEDM Tech. Dig."},{"key":"ref8","first-page":"19.7.1","article-title":"A FeFET based super-low-power ultra-fast embedded NVM technology for 22 nm FDSOI and beyond","author":"Dunkel","year":"2018","journal-title":"in IEDM Tech. Dig."},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IMW48823.2020.9108150"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3118645"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IMW59701.2024.10536957"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6860603"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/NVMTS.2016.7781517"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/tdmr.2018.2829112"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2022.3143485"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1039\/D1NR05107E"}],"event":{"name":"2024 22nd Non-Volatile Memory Technology Symposium (NVMTS)","location":"Busan, Korea, Republic of","start":{"date-parts":[[2024,10,20]]},"end":{"date-parts":[[2024,10,23]]}},"container-title":["2024 22nd Non-Volatile Memory Technology Symposium (NVMTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10830780\/10830794\/10830836.pdf?arnumber=10830836","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,1,14]],"date-time":"2025-01-14T05:50:36Z","timestamp":1736833836000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10830836\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10,20]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/ieeeconf63530.2024.10830836","relation":{},"subject":[],"published":{"date-parts":[[2024,10,20]]}}}