{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,1]],"date-time":"2025-11-01T23:03:57Z","timestamp":1762038237501,"version":"build-2065373602"},"reference-count":6,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,5,1]],"date-time":"2021-05-01T00:00:00Z","timestamp":1619827200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,5,1]],"date-time":"2021-05-01T00:00:00Z","timestamp":1619827200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,5,1]],"date-time":"2021-05-01T00:00:00Z","timestamp":1619827200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,5]]},"DOI":"10.1109\/imw51353.2021.9439600","type":"proceedings-article","created":{"date-parts":[[2021,5,31]],"date-time":"2021-05-31T22:40:32Z","timestamp":1622500832000},"page":"1-4","source":"Crossref","is-referenced-by-count":3,"title":["A 1 Tb 4b\/cell 5th-Generation 3D-NAND Flash Memory with 2ms tPROG, 110us tR and 1.2Gb\/s\/pin Interface"],"prefix":"10.1109","author":[{"given":"Doo-Hyun","family":"Kim","sequence":"first","affiliation":[]}],"member":"263","reference":[{"key":"ref4","first-page":"202","article-title":"A 512Gb 3b\/cell 64-Stacked WL 3D-NAND flash memory","author":"kim","year":"2017","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref3","first-page":"130","article-title":"256Gb 3b\/Cell V-NAND Flash Memory with 48 Stacked WL Layers","author":"kang","year":"2016","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510660"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2018.8310323"},{"key":"ref2","first-page":"130","article-title":"A 128Gb 3b\/Cell V-NAND Flash Memory with 1Gb\/s I\/O Rate","author":"im","year":"2015","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2014.6757458"}],"event":{"name":"2021 IEEE International Memory Workshop (IMW)","start":{"date-parts":[[2021,5,16]]},"location":"Dresden, Germany","end":{"date-parts":[[2021,5,19]]}},"container-title":["2021 IEEE International Memory Workshop (IMW)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9439548\/9439588\/09439600.pdf?arnumber=9439600","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:21:51Z","timestamp":1657333311000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9439600\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,5]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/imw51353.2021.9439600","relation":{},"subject":[],"published":{"date-parts":[[2021,5]]}}}