{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T04:49:27Z","timestamp":1747284567124},"reference-count":5,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,5,1]],"date-time":"2022-05-01T00:00:00Z","timestamp":1651363200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,5,1]],"date-time":"2022-05-01T00:00:00Z","timestamp":1651363200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,5]]},"DOI":"10.1109\/imw52921.2022.9779300","type":"proceedings-article","created":{"date-parts":[[2022,5,25]],"date-time":"2022-05-25T19:42:43Z","timestamp":1653507763000},"source":"Crossref","is-referenced-by-count":18,"title":["Reliability of 28nm embedded RRAM for consumer and industrial products"],"prefix":"10.1109","author":[{"given":"Christian","family":"Peters","sequence":"first","affiliation":[{"name":"Infineon Technologies AG,Neubiberg,Germany,85579"}]},{"given":"Frank","family":"Adler","sequence":"additional","affiliation":[{"name":"Infineon Technologies AG,Neubiberg,Germany,85579"}]},{"given":"Karl","family":"Hofmann","sequence":"additional","affiliation":[{"name":"Infineon Technologies AG,Neubiberg,Germany,85579"}]},{"given":"Jan","family":"Otterstedt","sequence":"additional","affiliation":[{"name":"Infineon Technologies AG,Neubiberg,Germany,85579"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.833583"},{"key":"ref3","first-page":"2.4","article-title":"Design Challenged and Solutions of Emerging Nonvolatile Memory for Embedded Applications","author":"chih","year":"0","journal-title":"IEDM"},{"key":"ref5","first-page":"tm 2","article-title":"Industrially Applicable Read Disturb Model and Performance on MegaBit 28nm Embedded RRAM","author":"yang","year":"2020","journal-title":"VLSI"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IMW48823.2020.9108121"},{"key":"ref1","first-page":"t8-3","article-title":"A 5ns Fast Write Multi-Level Non-Volatile 1 K bits RRAM Memory with Advance Write Scheme","author":"sheu","year":"2009","journal-title":"VLSI"}],"event":{"name":"2022 IEEE International Memory Workshop (IMW)","location":"Dresden, Germany","start":{"date-parts":[[2022,5,15]]},"end":{"date-parts":[[2022,5,18]]}},"container-title":["2022 IEEE International Memory Workshop (IMW)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9779263\/9779243\/09779300.pdf?arnumber=9779300","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,27]],"date-time":"2022-06-27T21:18:00Z","timestamp":1656364680000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9779300\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,5]]},"references-count":5,"URL":"https:\/\/doi.org\/10.1109\/imw52921.2022.9779300","relation":{},"subject":[],"published":{"date-parts":[[2022,5]]}}}