{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,7]],"date-time":"2026-03-07T14:01:36Z","timestamp":1772892096072,"version":"3.50.1"},"reference-count":11,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,5,1]],"date-time":"2022-05-01T00:00:00Z","timestamp":1651363200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,5,1]],"date-time":"2022-05-01T00:00:00Z","timestamp":1651363200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,5]]},"DOI":"10.1109\/imw52921.2022.9779301","type":"proceedings-article","created":{"date-parts":[[2022,5,25]],"date-time":"2022-05-25T19:42:43Z","timestamp":1653507763000},"page":"1-4","source":"Crossref","is-referenced-by-count":11,"title":["Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation"],"prefix":"10.1109","author":[{"given":"Hitomi","family":"Tanaka","sequence":"first","affiliation":[{"name":"Institute of Memory Technology Research &#x0026; Development, Kioxia Corporation,Japan"}]},{"given":"Yuta","family":"Aiba","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology Research &#x0026; Development, Kioxia Corporation,Japan"}]},{"given":"Takashi","family":"Maeda","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology Research &#x0026; Development, Kioxia Corporation,Japan"}]},{"given":"Kensuke","family":"Ota","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology Research &#x0026; Development, Kioxia Corporation,Japan"}]},{"given":"Yusuke","family":"Higashi","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology Research &#x0026; Development, Kioxia Corporation,Japan"}]},{"given":"Keiichi","family":"Sawa","sequence":"additional","affiliation":[{"name":"Kioxia Corporation,Memory Div.,Japan"}]},{"given":"Fumie","family":"Kikushima","sequence":"additional","affiliation":[{"name":"Kioxia Corporation,Memory Div.,Japan"}]},{"given":"Masayuki","family":"Miura","sequence":"additional","affiliation":[{"name":"Kioxia Corporation,Memory Div.,Japan"}]},{"given":"Tomoya","family":"Sanuki","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology Research &#x0026; Development, Kioxia Corporation,Japan"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1145\/3307650.3322219"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2018.8388826"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2014.6849381"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JXCDC.2021.3123783"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479009"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IMW51353.2021.9439594"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993556"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614667"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnology18217.2020.9265065"},{"key":"ref9","article-title":"Understanding the kinetics of Metal Induced LateralCrystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory","author":"ramesh","year":"0","journal-title":"2021 IEEE International Electron Devices Meeting (IEDM)"},{"key":"ref1","author":"reinsel","year":"2017","journal-title":"IDC White Paper Data Age 2025"}],"event":{"name":"2022 IEEE International Memory Workshop (IMW)","location":"Dresden, Germany","start":{"date-parts":[[2022,5,15]]},"end":{"date-parts":[[2022,5,18]]}},"container-title":["2022 IEEE International Memory Workshop (IMW)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9779263\/9779243\/09779301.pdf?arnumber=9779301","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,27]],"date-time":"2022-06-27T21:17:55Z","timestamp":1656364675000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9779301\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,5]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/imw52921.2022.9779301","relation":{},"subject":[],"published":{"date-parts":[[2022,5]]}}}