{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,27]],"date-time":"2026-10-27T20:02:39Z","timestamp":1793131359357,"version":"4.5.0"},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,5,18]],"date-time":"2025-05-18T00:00:00Z","timestamp":1747526400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,5,18]],"date-time":"2025-05-18T00:00:00Z","timestamp":1747526400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,5,18]]},"DOI":"10.1109\/imw61990.2025.11026934","type":"proceedings-article","created":{"date-parts":[[2025,6,12]],"date-time":"2025-06-12T13:40:04Z","timestamp":1749735604000},"page":"1-4","source":"Crossref","is-referenced-by-count":4,"title":["Al-Doped HZO: A BEoL compatible Ferroelectric Material for Automotive-Grade Memory"],"prefix":"10.1109","author":[{"given":"David","family":"Lehninger","sequence":"first","affiliation":[{"name":"Center Nanoelectronic Technologies CNT,Fraunhofer IPMS,Dresden,Germany,01109"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ayse","family":"S\u00fcnb\u00fcl","sequence":"additional","affiliation":[{"name":"Center Nanoelectronic Technologies CNT,Fraunhofer IPMS,Dresden,Germany,01109"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hannes","family":"M\u00e4hne","sequence":"additional","affiliation":[{"name":"X-FAB Dresden GmbH and Company KG,Dresden,Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Thomas","family":"K\u00e4mpfe","sequence":"additional","affiliation":[{"name":"Center Nanoelectronic Technologies CNT,Fraunhofer IPMS,Dresden,Germany,01109"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Alison","family":"Viegas","sequence":"additional","affiliation":[{"name":"Center Nanoelectronic Technologies CNT,Fraunhofer IPMS,Dresden,Germany,01109"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Justine","family":"Barbot","sequence":"additional","affiliation":[{"name":"X-FAB Global Services GmbH,Erfurt,Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kerstin","family":"Bernert","sequence":"additional","affiliation":[{"name":"X-FAB Dresden GmbH and Company KG,Dresden,Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Steffen","family":"Thiem","sequence":"additional","affiliation":[{"name":"X-FAB Dresden GmbH and Company KG,Dresden,Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Konrad","family":"Seidel","sequence":"additional","affiliation":[{"name":"Center Nanoelectronic Technologies CNT,Fraunhofer IPMS,Dresden,Germany,01109"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Maximilian","family":"Lederer","sequence":"additional","affiliation":[{"name":"Center Nanoelectronic Technologies CNT,Fraunhofer IPMS,Dresden,Germany,01109"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MM.2020.3026667"},{"key":"ref2","article-title":"Ferroelektrische Speicherzelle, Herstellungsverfahren und integrierte Schaltung mit der ferroelektrischen Speicherzelle","volume-title":"Patent","author":"B\u00f6scke"},{"issue":"5","key":"ref3","first-page":"N30","article-title":"Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects","volume-title":"ECS Journal of Solid State Science and Technology","volume":"4","author":"M\u00fcller","year":"2015"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202100082"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201900840"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2012.11.125"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1002\/apxr.202200108"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-022-04425-6"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2020.3025846"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.5026424"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.9b11146"},{"key":"ref12","article-title":"AEC-Q100\u2013005-Rev-D1. Non-Volatile Memory Program\/Erase Endurance, Data Retention, and Operational Life Test","year":"2012"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48228.2024.10529302"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IMW52921.2022.9779281"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1063\/5.0047104"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2022.3204360"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IMW52921.2022.9779252"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/IEEECONF63530.2024.10830822"}],"event":{"name":"2025 IEEE International Memory Workshop (IMW)","location":"Monterey, CA, USA","start":{"date-parts":[[2025,5,18]]},"end":{"date-parts":[[2025,5,21]]}},"container-title":["2025 IEEE International Memory Workshop (IMW)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/11026918\/11026883\/11026934.pdf?arnumber=11026934","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,13]],"date-time":"2025-06-13T01:19:35Z","timestamp":1749777575000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11026934\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,5,18]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/imw61990.2025.11026934","relation":{},"subject":[],"published":{"date-parts":[[2025,5,18]]}}}