{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T06:22:30Z","timestamp":1730269350699,"version":"3.28.0"},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,7]]},"DOI":"10.1109\/iolts.2017.8046239","type":"proceedings-article","created":{"date-parts":[[2017,9,29]],"date-time":"2017-09-29T16:57:02Z","timestamp":1506704222000},"page":"93-95","source":"Crossref","is-referenced-by-count":0,"title":["6T CMOS SRAMs reliability monitoring through stability measurements"],"prefix":"10.1109","author":[{"given":"B.","family":"Alorda","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Torrens","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Bota","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IOLTS.2016.7604678"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2462319"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/DTIS.2017.7930175"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2032698"},{"key":"ref14","first-page":"534","article-title":"Analysis of read current and write trip voltage variability from a 1MB SRAM test structure","volume":"21","author":"fisher","year":"2008","journal-title":"IEEE Trans Semiconductor Manufacture"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IOLTS.2013.6604046"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.892153"},{"key":"ref3","first-page":"439","article-title":"Time Dependent Vccmin Degradatio of SRAM Fabricated with High-k Gate Dielectrics","author":"lin","year":"2007","journal-title":"IEEE International Reliability Physics Symposium"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2015.2500900"},{"key":"ref5","article-title":"Estimation of Remaining Life Using Embedded SRAM for Wearout Parameter Extraction","author":"kim","year":"2011","journal-title":"6th IEEE International Workshop on Advances in Sensors and Interfaces"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479099"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6861171"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2014.2360779"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/DTIS.2010.5487565"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.7873\/DATE.2014.174"}],"event":{"name":"2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)","start":{"date-parts":[[2017,7,3]]},"location":"Thessaloniki, Greece","end":{"date-parts":[[2017,7,5]]}},"container-title":["2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8030509\/8046164\/08046239.pdf?arnumber=8046239","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,12,13]],"date-time":"2017-12-13T16:11:14Z","timestamp":1513181474000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8046239\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,7]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/iolts.2017.8046239","relation":{},"subject":[],"published":{"date-parts":[[2017,7]]}}}