{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,23]],"date-time":"2024-10-23T09:12:49Z","timestamp":1729674769913,"version":"3.28.0"},"reference-count":17,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1109\/irps.2015.7112684","type":"proceedings-article","created":{"date-parts":[[2015,6,3]],"date-time":"2015-06-03T19:32:57Z","timestamp":1433359977000},"page":"2D.5.1-2D.5.5","source":"Crossref","is-referenced-by-count":1,"title":["Study of a new electromigration failure mechanism by novel test structure"],"prefix":"10.1109","author":[{"given":"L. D.","family":"Chen","sequence":"first","affiliation":[]},{"given":"B. L.","family":"Lin","sequence":"additional","affiliation":[]},{"given":"M. H.","family":"Hsieh","sequence":"additional","affiliation":[]},{"given":"C. W.","family":"Chang","sequence":"additional","affiliation":[]},{"given":"J. S.","family":"Tsai","sequence":"additional","affiliation":[]},{"given":"J. C.","family":"Peng","sequence":"additional","affiliation":[]},{"given":"C. C.","family":"Chiu","sequence":"additional","affiliation":[]},{"given":"Y.-H.","family":"Lee","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2008.4558917"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2011.5784494"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2010.5703480"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"3.1.1","DOI":"10.1109\/IEDM.2014.7046970","article-title":"An Ehhanced 16nm CMOS Technology Featuring 2nd Generation FinFET Transistors and Advanced Cu\/low-k Interconnect for Low Power and High Performance Applications","author":"wu","year":"2014","journal-title":"International Electron Devices Meeting (IEDM) 2014 IEEE International"},{"key":"ref14","first-page":"24","article-title":"Impact od Via-Line Contact on Cu Interconnect Electromigration Performance","author":"li","year":"2005","journal-title":"Reliability Physics Symposium (IRPS) 2005 IEEE International"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173295"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241868"},{"key":"ref17","first-page":"2c.2.1","article-title":"Microstructure local effect for electromigration reliability improvement and Cu damascene lines design rules relaxation","author":"franck","year":"2013","journal-title":"Reliability Physics Symposium (IRPS) 2013 IEEE International"},{"journal-title":"JESD89A JEDEC","first-page":"6","year":"2001","key":"ref4"},{"key":"ref3","doi-asserted-by":"crossref","DOI":"10.1109\/TSM.2004.841832","volume":"18","author":"hussein","year":"2005","journal-title":"IEEE Transactions on Semiconductor Manufacturing"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2007.369881"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2006.251199"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2006.251200"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173296"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.05.015"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1845842"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2004.1315328"}],"event":{"name":"2015 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2015,4,19]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2015,4,23]]}},"container-title":["2015 IEEE International Reliability Physics Symposium"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7106273\/7112653\/07112684.pdf?arnumber=7112684","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T12:55:05Z","timestamp":1498222505000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7112684\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/irps.2015.7112684","relation":{},"subject":[],"published":{"date-parts":[[2015,4]]}}}