{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T06:52:16Z","timestamp":1730271136086,"version":"3.28.0"},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1109\/irps.2015.7112690","type":"proceedings-article","created":{"date-parts":[[2015,6,3]],"date-time":"2015-06-03T19:32:57Z","timestamp":1433359977000},"page":"2E.6.1-2E.6.5","source":"Crossref","is-referenced-by-count":0,"title":["Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs"],"prefix":"10.1109","author":[{"given":"G.","family":"Sereni","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"L.","family":"Vandelli","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Cavicchioli","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"L.","family":"Larcher","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D.","family":"Veksler","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Bersuker","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-1547-4"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.2146060"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.2883956"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724641"},{"key":"ref14","article-title":"Spectroscopic properties of oxygen vacancies in monoclinic Hf O 2 calculated with periodic and embedded cluster density functional theory","volume":"20","author":"ramo","year":"2007","journal-title":"Phys Rev B 75"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2251602"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1966.15827"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(62)90111-9"},{"key":"ref6","first-page":"11","article-title":"A New Physical Method Based on CV-GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k\/III-V MOSFETs","volume":"pp","author":"sereni","year":"0","journal-title":"Electron Devices IEEE Transactions on"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/0039-6028(71)90092-6"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.813236"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6860590"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424359"},{"key":"ref1","first-page":"1147","article-title":"Status of the GaAs metal-oxidesemiconductor technology","volume":"55","author":"mimura","year":"1908","journal-title":"IEEE Trans Electr Dev"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2158825"}],"event":{"name":"2015 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2015,4,19]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2015,4,23]]}},"container-title":["2015 IEEE International Reliability Physics Symposium"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7106273\/7112653\/07112690.pdf?arnumber=7112690","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T19:17:23Z","timestamp":1490383043000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7112690\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/irps.2015.7112690","relation":{},"subject":[],"published":{"date-parts":[[2015,4]]}}}