{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T21:24:49Z","timestamp":1729632289996,"version":"3.28.0"},"reference-count":35,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1109\/irps.2015.7112723","type":"proceedings-article","created":{"date-parts":[[2015,6,3]],"date-time":"2015-06-03T15:32:57Z","timestamp":1433345577000},"page":"4A.1.1-4A.1.6","source":"Crossref","is-referenced-by-count":2,"title":["Characterization and reliability of III-V gate-all-around MOSFETs"],"prefix":"10.1109","author":[{"given":"Mengwei","family":"Si","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"SangHoon","family":"Shin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nathan J.","family":"Conrad","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiangjiang","family":"Gu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jingyun","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Muhammad A.","family":"Alam","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peide D.","family":"Ye","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1038\/420378a"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.03.013"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1999.824251"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2158183"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2004.1419081"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2003.1269295"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2296556"},{"key":"ref11","first-page":"495","article-title":"Quantum capacitance in scaled down III-V FETs","author":"jin","year":"2009","journal-title":"International Electron Devices Meeting (IEDM) Technical Digest"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2013.2274282"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047086"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2181318"},{"key":"ref15","first-page":"188","article-title":"Impact of Nanowire Variability on Peformance and Reliability of Gate-all-around III-V MOSFETs","author":"shin","year":"2013","journal-title":"International Electron Devices Meeting (IEDM) Technical Digest"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6860641"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047088"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2190417"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241818"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2283854"},{"key":"ref4","first-page":"629","article-title":"Excellent device performance of 3D In0.53Ga0.47 As gate-wrap-around field-effect-transistors with high-k gate dielectrics","author":"fei","year":"2012","journal-title":"International Electron Devices Meeting (IEDM) Technical Digest"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2024022"},{"key":"ref3","first-page":"633","article-title":"20–80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT= 1.2 nm and Lowest SS= 63mV\/dec","author":"gu","year":"2012","journal-title":"International Electron Devices Meeting (IEDM) Technical Digest"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131661"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2258884"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.4794846"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2359579"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"626","DOI":"10.1021\/nl4038399","article-title":"Electron Transport in Multigate InxGa1-xAs Nanowire FETs: From Diffusive to Ballistic Regimes at Room Temperature","volume":"14","author":"thathachary","year":"2014","journal-title":"Nano Letters"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424356"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2301843"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1038\/nature10677"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2106107"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2277935"},{"key":"ref21","first-page":"1","article-title":"InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La) AlOX\/ZrO2 gate stack","author":"huang","year":"2009","journal-title":"International Electron Devices Meeting (IEDM) Technical Digest"},{"key":"ref24","first-page":"6da.2.1","article-title":"Suitability of high-k gate oxides for III-V devices: a PBTI study in In0.53Ga0.47As devices with Al2O3","author":"franco","year":"2014","journal-title":"IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4419074"},{"article-title":"Physics of Nanoscale MOSFETs","year":"2008","author":"lundstrom","key":"ref26"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047087"}],"event":{"name":"2015 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2015,4,19]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2015,4,23]]}},"container-title":["2015 IEEE International Reliability Physics Symposium"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7106273\/7112653\/07112723.pdf?arnumber=7112723","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T08:55:02Z","timestamp":1498208102000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7112723\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":35,"URL":"https:\/\/doi.org\/10.1109\/irps.2015.7112723","relation":{},"subject":[],"published":{"date-parts":[[2015,4]]}}}