{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,24]],"date-time":"2026-04-24T14:53:17Z","timestamp":1777042397148,"version":"3.51.4"},"reference-count":12,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1109\/irps.2015.7112726","type":"proceedings-article","created":{"date-parts":[[2015,6,3]],"date-time":"2015-06-03T19:32:57Z","timestamp":1433359977000},"page":"4A.4.1-4A.4.6","source":"Crossref","is-referenced-by-count":36,"title":["Self-heating and its implications on hot carrier reliability evaluations"],"prefix":"10.1109","author":[{"given":"Steven","family":"Mittl","sequence":"first","affiliation":[]},{"given":"Fernando","family":"Guarin","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","article-title":"Embedded Non-Volatile Memory for High-K \/ Metal Gate CMOS Technologies","author":"khan","year":"2015","journal-title":"VLSI"},{"key":"ref3","article-title":"Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices","author":"lee","year":"2013","journal-title":"VLSI"},{"key":"ref10","author":"stellari","year":"2015","journal-title":"IRPS"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.911354"},{"key":"ref11","author":"jenkins","year":"0"},{"key":"ref5","article-title":"Advanced characterization & modeling of self-heating effect in ultra-scaled FinFETs","author":"luo","year":"2015","journal-title":"VLSI"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241866"},{"key":"ref8","first-page":"113","article-title":"Bias and Temperature Dependent Hot-Carrier Characteristics of Sub-100nm Partially Depleted SOI MOSFETS","author":"zhao","year":"2002","journal-title":"IRW Final Report"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/S3S.2014.7028186"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2012.2227482"},{"key":"ref9","article-title":"Measurement of self-heating using off-state leakage current","author":"polonski","year":"0","journal-title":"EDL 2004"},{"key":"ref1","article-title":"Excess hot carrier currents in SOI MOSFETs and its Implications","author":"su","year":"0","journal-title":"IRPS 2002"}],"event":{"name":"2015 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2015,4,19]]},"end":{"date-parts":[[2015,4,23]]}},"container-title":["2015 IEEE International Reliability Physics Symposium"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7106273\/7112653\/07112726.pdf?arnumber=7112726","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T20:56:53Z","timestamp":1490389013000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7112726\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/irps.2015.7112726","relation":{},"subject":[],"published":{"date-parts":[[2015,4]]}}}