{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T05:51:25Z","timestamp":1775454685194,"version":"3.50.1"},"reference-count":28,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1109\/irps.2015.7112743","type":"proceedings-article","created":{"date-parts":[[2015,6,3]],"date-time":"2015-06-03T19:32:57Z","timestamp":1433359977000},"page":"5B.2.1-5B.2.9","source":"Crossref","is-referenced-by-count":5,"title":["Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfO<inf>x<\/inf> RRAM"],"prefix":"10.1109","author":[{"given":"N.","family":"Raghavan","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D. D.","family":"Frey","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Bosman","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"K. L.","family":"Pey","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","first-page":"my.9.1","article-title":"Stochastic failure model for endurance degradation in vacancy modulated HfOx RRAM using the percolation cell framework","author":"raghavan","year":"2014","journal-title":"IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2102002"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2281991"},{"key":"ref13","first-page":"98t","article-title":"Modeling RRAM set\/reset statistics resulting in guidelines for optimized operation","author":"degraeve","year":"2013","journal-title":"Symposium on VLSI Technology (VLSIT)"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242468"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/VLSI-TSA.2012.6210101"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2013.6582096"},{"key":"ref17","doi-asserted-by":"crossref","first-page":"515","DOI":"10.1007\/s00339-008-4975-3","article-title":"Exponential ionic drift: fast switching and low volatility of thin-film memristors","volume":"94","author":"strukov","year":"2009","journal-title":"Applied Physics A"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2078794"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.89.225901"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479107"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2277916"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1063\/1.4881500"},{"key":"ref3","first-page":"20.3.1","article-title":"Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation","author":"chen","year":"2012","journal-title":"IEEE International Electron Devices Meeting (IEDM)"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2241064"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131539"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2010.5618200"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2013.6532042"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.07.135"},{"key":"ref9","first-page":"my.2.1","article-title":"Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM","author":"deora","year":"2013","journal-title":"IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref1","first-page":"31.6.1","article-title":"10×10nm2 Hf\/HfOx), crossbar resistive RAM with excellent performance, reliability and low-energy operation","author":"govoreanu","year":"2011","journal-title":"IEEE International Electron Devices Meeting (IEDM)"},{"key":"ref20","first-page":"164t","article-title":"RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AIOx RRAM","author":"raghavan","year":"2013","journal-title":"Symposium on VLSI Technology (VLSIT)"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1063\/1.368217"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1006\/spmi.1997.0535"},{"key":"ref24","first-page":"30","article-title":"Intrinsic switching variability in HfO2 RRAM","author":"fantini","year":"2013","journal-title":"5th IEEE International Memory Workshop (IMW)"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(01)00120-2"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1063\/1.4794519"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1021\/nl500049g"}],"event":{"name":"2015 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2015,4,19]]},"end":{"date-parts":[[2015,4,23]]}},"container-title":["2015 IEEE International Reliability Physics Symposium"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7106273\/7112653\/07112743.pdf?arnumber=7112743","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T12:55:04Z","timestamp":1498222504000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7112743\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":28,"URL":"https:\/\/doi.org\/10.1109\/irps.2015.7112743","relation":{},"subject":[],"published":{"date-parts":[[2015,4]]}}}